Structure and formation method of fin-like field effect transistor

• US 9,490,365 B2
• Filed: 09/11/2014
• Issued: 11/08/2016
• Est. Priority Date: 06/12/2014
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Jangjian, Shiu-Ko, Lin, Tzu-Kai, Jeng, Chi-Cherng
• Primary Examiner(s): Pham, Long
• Application Number:
  US14/483,617
• Publication Number:
  US 20150364593A1
• Time in Patent Office: 789 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823821 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0924 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/66636 with source or drain recessed by etching or first recessed by etching and then refilled
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

Claims

1. A semiconductor device structure, comprising:

a semiconductor substrate;

a fin structure over the semiconductor substrate;

a gate stack covering a portion of the fin structure;

an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack; and

a semiconductor protection layer over the epitaxially grown source/drain structure, wherein the semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure, and the semiconductor protection layer is not between the gate stack and the portion of the fin structure covered by the gate stack.

2. The semiconductor device structure as claimed in claim 1, wherein the semiconductor protection layer is in direct contact with the epitaxially grown source/drain structure.

3. The semiconductor device structure as claimed in claim 1, wherein the semiconductor protection layer is made of a substantially pure silicon material.

4. The semiconductor device structure as claimed in claim 1, wherein the atomic concentration of silicon of the semiconductor protection layer is in a range from about 50% to about 99%.

5. The semiconductor device structure as claimed in claim 1, wherein the atomic concentration of silicon of the semiconductor protection layer gradually decreases along a direction from a surface of the semiconductor protection layer towards the epitaxially grown source/drain structure.

6. The semiconductor device structure as claimed in claim 1, wherein the epitaxially grown source/drain structure is an n-type semiconductor material.

7. The semiconductor device structure as claimed in claim 1, wherein the epitaxially grown source/drain structure is a p-type semiconductor material.

8. The semiconductor device structure as claimed in claim 1, further comprising support elements covering a lower portion of the epitaxially grown source/drain structure.

9. The semiconductor device structure as claimed in claim 8, wherein the support elements are in direct contact with the epitaxially grown source/drain structure, and the support elements are between the semiconductor protection layer and the semiconductor substrate.

10. The semiconductor device structure as claimed in claim 1, wherein the semiconductor protection layer has a first portion and a second portion, and the first portion is thinner than the second portion.

11. A semiconductor device structure, comprising:

a semiconductor substrate;

a first fin structure over the semiconductor substrate;

a gate stack covering a portion of the first fin structure;

a first epitaxially grown source/drain structure over the first fin structure;

a second fin structure over the semiconductor substrate;

a second epitaxially grown source/drain structure over the second fin structure;

a first semiconductor protection layer over the first epitaxially grown source/drain structure, wherein the first semiconductor protection layer has an atomic concentration of silicon greater than that of the first epitaxially grown source/drain structure, and the first semiconductor protection layer is not between the gate stack and the portion of the first fin structure covered by the gate stack; and

a second semiconductor protection layer over the second epitaxially grown source/drain structure, wherein the second semiconductor protection layer has an atomic concentration of silicon greater than that of the second epitaxially grown source/drain structure.

12. The semiconductor device structure as claimed in claim 11, wherein at least one of the first semiconductor protection layer and the second semiconductor protection layer is made of a substantially pure silicon material.

13. The semiconductor device structure as claimed in claim 11, wherein the atomic concentration of silicon of the first semiconductor protection layer or the second semiconductor protection layer is in a range from about 50% to about 99%.

14. The semiconductor device structure as claimed in claim 11, wherein the atomic concentration of silicon of the first semiconductor protection layer gradually decreases along a direction from a surface of the first semiconductor protection layer towards the first epitaxially grown source/drain structure.

15. The semiconductor device structure as claimed in claim 11, wherein the first epitaxially grown source/drain structure is an n-type semiconductor material, and the second epitaxially grown source/drain structure is a p-type semiconductor material.

16. A semiconductor device structure, comprising:

a semiconductor substrate;

a fin structure over the semiconductor substrate;

a gate stack covering a portion of the fin structure;

an epitaxially grown source/drain structure over the fin structure; and

a semiconductor protection layer over the epitaxially grown source/drain structure, wherein the semiconductor protection layer has an atomic concentration of a semiconductor element greater than that of the epitaxially grown source/drain structure, and the gate stack is in direct contact with the portion of the fin structure covered by the gate stack.

17. The semiconductor device structure as claimed in claim 16, wherein the semiconductor element is silicon.

18. The semiconductor device structure as claimed in claim 16, wherein the semiconductor protection layer is in direct contact with the epitaxially grown source/drain structure.

19. The semiconductor device structure as claimed in claim 16, wherein the atomic concentration of the semiconductor element of the semiconductor protection layer gradually decreases along a direction from a surface of the semiconductor protection layer towards the epitaxially grown source/drain structure.

20. The semiconductor device structure as claimed in claim 16, further comprising an isolation feature over the semiconductor substrate, wherein the isolation feature surrounds the fin structure and a lower portion of the epitaxially grown source/drain structure.