P-type doping layers for use with light emitting devices
First Claim
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1. A light emitting diode (LED), comprising:
- a substrate;
an n-doped Group III-V semiconductor layer adjacent the substrate;
a u-doped Group III-V layer adjacent the n-doped Group III-V semiconductor layer, the u-doped layer generating V-pits;
an active layer adjacent the u-doped Group III-V semiconductor layer, the active layer comprising a portion that extends into the V-pits;
an electron blocking layer adjacent the active layer, the electron blocking layer comprising a portion that extends into the V-pits; and
a p-doped Group III-V semiconductor layer adjacent the electron blocking layer, the p-doped Group III-V semiconductor layer comprising a portion that extends into the V-pits, wherein;
the portion of the p-doped Group III-V semiconductor layer that extends into the V-pits is a first portion;
the p-doped Group III-V semiconductor layer additionally comprises a second portion that does not extend into the V-pits; and
dopant characteristics of the first portion differ from dopant characteristics of the second portion.
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Abstract
A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.
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Citations
29 Claims
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1. A light emitting diode (LED), comprising:
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a substrate; an n-doped Group III-V semiconductor layer adjacent the substrate; a u-doped Group III-V layer adjacent the n-doped Group III-V semiconductor layer, the u-doped layer generating V-pits; an active layer adjacent the u-doped Group III-V semiconductor layer, the active layer comprising a portion that extends into the V-pits; an electron blocking layer adjacent the active layer, the electron blocking layer comprising a portion that extends into the V-pits; and a p-doped Group III-V semiconductor layer adjacent the electron blocking layer, the p-doped Group III-V semiconductor layer comprising a portion that extends into the V-pits, wherein; the portion of the p-doped Group III-V semiconductor layer that extends into the V-pits is a first portion; the p-doped Group III-V semiconductor layer additionally comprises a second portion that does not extend into the V-pits; and dopant characteristics of the first portion differ from dopant characteristics of the second portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification