Semiconductor device, method of manufacturing semiconductor device, solid-state image pickup unit, and electronic apparatus
First Claim
1. A semiconductor device comprising:
- a functional layer between a first electrode and a second electrode, the functional layer including an organic film,wherein the first electrode and the second electrode are made of a same transparent conductive material, andan oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.
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Accused Products
Abstract
There are provided a semiconductor device capable of adjusting a work function without reducing light transmittance of an electrode, a method of manufacturing this semiconductor device, a solid-state image pickup unit including this semiconductor device, and an electronic apparatus including this solid-state image pickup action. The semiconductor device includes a functional layer between a first electrode and a second electrode, the functional layer including an organic film, in which the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a functional layer between a first electrode and a second electrode, the functional layer including an organic film, wherein the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a semiconductor device comprising:
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forming a first electrode made of a transparent conductive material; forming an inorganic oxide layer with a higher metal content ratio than that in an ideal composition on the first electrode; forming a reduced layer in a part or a whole in a thickness direction from an interface on a functional layer side of the first electrode by annealing treatment and allowing an oxygen amount of the reduced layer to be smaller than an oxygen amount of the transparent conductive material; forming the functional layer including an organic film on the inorganic oxide layer; and forming a second electrode made of the same transparent conductive material as that of the first electrode on the functional layer. - View Dependent Claims (11, 12)
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13. A method of manufacturing a semiconductor device comprising:
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forming a first electrode made of a transparent conductive material; forming a first layer and a second layer on the first electrode in this order from the first electrode side, the first layer made of an inorganic oxide with a higher metal content ratio than that in an ideal composition or a metal, and the second layer made of an inorganic oxide with a larger oxygen amount than that of the first layer; forming a reduced layer in a part or a whole in a thickness direction from an interface on a functional layer side of the first electrode by annealing treatment and allowing an oxygen amount of the reduced layer to be smaller than an oxygen amount of the transparent conductive material; forming the functional layer including an organic film on the second layer; and forming a second electrode made of the same transparent conductive material as that of the first electrode on the functional layer.
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14. A method of manufacturing a semiconductor device comprising:
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forming a first electrode made of a transparent conductive material; forming a functional layer including an organic film on the first electrode; forming a second electrode made of the same transparent conductive material as that of the first electrode on the functional layer; and allowing, by annealing treatment, an oxygen amount at an interface on the functional layer side of the second electrode to be larger than an oxygen amount at an interface on the functional layer side of the first electrode. - View Dependent Claims (15)
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16. A solid-state image pickup unit provided with pixels each of which includes one or a plurality of organic photoelectric conversion sections, the organic photoelectric conversion sections each comprising:
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a functional layer between a first electrode and a second electrode, the functional layer including an organic film, wherein the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode. - View Dependent Claims (17, 18, 19)
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20. An electronic apparatus provided with a solid-state image pickup unit, the solid-state image pickup unit including pixels each of which includes one or a plurality of organic photoelectric conversion sections, the organic photoelectric conversion sections each comprising:
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a functional layer between a first electrode and a second electrode, the functional layer including an organic film, wherein the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.
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Specification