Organic light-emitting display apparatus and method for manufacturing the same

• US 9,490,449 B2
• Filed: 04/21/2014
• Issued: 11/08/2016
• Est. Priority Date: 07/25/2013
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Choi, Su-Hyuk, Kim, Hyun, Lee, Jae-Sun, Choi, Jai-Hyuk, Lee, Ung-Soo, Park, Jin-Woo
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): INOUSSA, MOULOUCOULAY
• Application Number:
  US14/257,379
• Publication Number:
  US 20150028301A1
• Time in Patent Office: 932 Days
• Field of Search: 257/40, 257/88, 257/98, 257/E33.074, 438/28, 438/29, 438/2, 313/504, 445/25
• US Class Current: 1/1
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 71/16 using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

An organic light-emitting display apparatus includes: a substrate, and an organic light-emitting device disposed on the substrate. The organic light-emitting device includes a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer. In addition, the organic light-emitting display apparatus further includes a thin film encapsulating layer disposed on the organic light-emitting device. The thin film encapsulating layer includes at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material. The LVT inorganic material includes tin oxide and at least one of boron oxide (B₂O₃), bismuth oxide (Bi₂O₃), barium oxide (BaO), and ammonium dihydrogen phosphate (NH₄H₂PO₄).

Claims

1. An organic light-emitting display apparatus comprising:

a substrate;

an organic light-emitting device disposed on the substrate, wherein the organic light-emitting device comprises a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer; and

a thin film encapsulating layer disposed on the organic light-emitting device, wherein the thin film encapsulating layer comprises at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material, wherein the LVT inorganic material includes tin oxide and at least one of boron oxide (B₂O₃), bismuth oxide (Bi₂O₃), barium oxide (BaO), and ammonium dihydrogen phosphate (NH₄H₂PO₄),

wherein a viscosity transition temperature of the LVT inorganic material is lower than a metamorphic temperature of the intermediate layer.

2. The organic light-emitting display apparatus of claim 1, wherein the LVT inorganic material further includes at least one of tin fluoride, niobium oxide, and tungsten oxide.

3. The organic light-emitting display apparatus of claim 1, wherein the LVT inorganic material includes tin oxide (SnO) and X, wherein X is at least one of B₂O₃, Bi₂O₃, BaO, and NH₄H₂PO₄.

7. The organic light-emitting display apparatus of claim 1, wherein a viscosity transition temperature of the LVT inorganic material is a minimum temperature capable of providing a flowability to the LVT inorganic material.

8. The organic light-emitting display apparatus of claim 1, wherein the thin film encapsulating layer covers a top surface and a side of the organic light-emitting device.

4. An organic light-emitting display apparatus comprising:

a substrate;

an organic light-emitting device disposed on the substrate, wherein the organic light-emitting device comprises a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer; and

a thin film encapsulating layer disposed on the organic light-emitting device, wherein the thin film encapsulating layer comprises at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material, wherein the LVT inorganic material includes tin oxide and at least one of boron oxide (B₂O₃), bismuth oxide (Bi₂O₃), barium oxide (BaO), and ammonium dihydrogen phosphate (NH₄H₂PO₄),

wherein the LVT inorganic material includes tin oxide (SnO), tin fluoride (SnF₂), and X, wherein X is at least one of B₂O₃, Bi₂O₃, BaO, and NH₄H₂PO₄.

5. The organic light-emitting display apparatus of claim 4, wherein the LVT inorganic material further includes niobium oxide (NbO).

6. The organic light-emitting display of claim 4, wherein the LVT inorganic material further includes tungsten oxide (WO₃).

9. A method for manufacturing an organic light-emitting display apparatus, the method comprising:

forming an organic light-emitting device on a substrate, wherein the organic light-emitting device includes a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer; and

forming a thin film encapsulating layer on the organic light-emitting device, wherein the thin film encapsulating layer comprises at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material, wherein the LVT inorganic material includes tin oxide and at least one of boron oxide (B₂O₃), bismuth oxide (Bi₂O₃), barium oxide (BaO), and ammonium dihydrogen phosphate (NH₄H₂PO₄),

wherein when the thin film encapsulation layer is formed, the viscosity transmission temperature is maintained to be lower than the metamorphic temperature of the intermediate layer.

10. The method of claim 9, wherein the forming of the thin film encapsulating layer is performed using a sputtering process.

11. The method of claim 10, wherein the sputtering process is performed using a sputtering target that includes tin oxide and at least one B₂O₃, Bi₂O₃, BaO, and NH₄H₂PO₄.

12. The method of claim 10, wherein the sputtering process is performed while the substrate is moving in at least one direction.

13. The method of claim 10, wherein the sputtering process uses two faced sputtering targets that do not face the substrate.

14. The method of claim 13, further comprising:

generating a plasma in a space between the two faced sputtering targets; and

disposing the substrate to face the space where the plasma is generated.

15. The method of claim 14, wherein one or more magnet units are disposed to face a surface opposite to a surface facing the plasma in surfaces of the two faced sputtering targets.

16. The method of claim 9, wherein the forming of the thin film encapsulating layer comprises:

forming a preliminary thin film encapsulating layer including the LVT inorganic material; and

healing the preliminary thin film encapsulating layer.

17. The method of claim 16, wherein the healing of the preliminary thin film encapsulating layer is performed in a temperature range from a viscosity transition temperature of the LVT inorganic material to a metamorphic temperature of a material included in the intermediate layer of the organic light-emitting device.

18. The method of claim 16, wherein the healing of the preliminary thin film encapsulating layer is performed in a temperature range from a viscosity transition temperature of the LVT inorganic material to a minimum value of metamorphic temperatures of a material included in the intermediate layer of the organic light-emitting device.

19. The method of claim 16, wherein the healing of the preliminary thin film encapsulating layer is performed at a viscosity transition temperature of the LVT inorganic material.

20. The method of claim 16, wherein the healing of the preliminary thin film encapsulating layer is performed by annealing the preliminary thin film encapsulating layer in a temperature range of about 80°

C. to about 132°

C. for about one hour to about three hours.

21. The method of claim 16, wherein the healing of the preliminary thin film encapsulating layer is performed in a vacuum atmosphere or an inert gas atmosphere.