Gate drive control system for SiC and IGBT power devices

• US 9,490,798 B1
• Filed: 03/18/2016
• Issued: 11/08/2016
• Est. Priority Date: 10/21/2015
• Status: Active Grant

• Current Assignee: Microchip Technology Incorporated
• Original Assignee: AgileSwitch, LLC
• Inventors: Smith, Alan K., Satheesh, Nitesh, Weber, Robin, Charpentier, Albert J.
• Primary Examiner(s): Nguyen, Long
• Application Number:
  US15/074,364
• Time in Patent Office: 235 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H03K 17/04206 in field-effect transistor switches

Abstract

A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and a comparator that compares output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generate a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the comparator indicates that the output signal of the power semiconductor device has changed relative to the reference value.

Claims

1. A gate-drive controller for a power semiconductor device comprising:

a comparator having a reference input terminal, a signal input terminal, coupled to receive an output signal of the power semiconductor device, and an output terminal, the comparator providing a Boolean output signal that is in a first state when a value of a signal applied to the signal input terminal is less than a reference value applied to the reference input terminal and in a second state when the value of the signal applied to the signal input terminal is greater than or equal to the reference value applied to the reference input terminal;

a master control unit (MCU) having a first input terminal configured to receive a turn-off trigger signal, a second input terminal configured to receive the Boolean signal provided by the comparator, a third input terminal configured to receive a de-saturation (DSAT) signal, a first output terminal configured to provide a drive signal for the power semiconductor device and a second output terminal configured to provide the reference value to the reference input terminal of the comparator;

wherein the MCU includes program instructions that cause the MCU to;

generate a first intermediate drive signal for the power semiconductor device when the trigger signal indicates that the power semiconductor device is to be turned off;

generate a second intermediate drive signal, different from the first drive signal, when the DSAT signal indicates that the power semiconductor device is experiencing de-saturation; and

to generate a final drive signal for the power semiconductor when the Boolean signal indicates that the output signal from the power semiconductor device has changed.

2. The gate drive controller of claim 1 wherein the signal input terminal of the comparator is coupled to receive a voltage signal representing a voltage across the power semiconductor device and the program instructions cause the MCU to generate the final drive signal when the output signal of the power semiconductor is greater than the reference value.

3. The gate drive controller of claim 1 wherein the signal input terminal of the comparator is coupled to receive a voltage signal representing a current flowing through the power semiconductor device and the program instructions cause the MCU to generate the final drive signal when the output signal of the power semiconductor is less than the reference value.

4. The gate drive controller of claim 3 further comprising

a further comparator having further reference input terminal, a further signal input terminal coupled to receive a voltage signal representing the voltage across the power semiconductor device and a further output terminal, the further comparator providing a further Boolean output signal that changes state from a first value to a second value when the voltage across the semiconductor device becomes less than the value applied to the further reference input terminal;

wherein the program instructions further cause the MCU to generate the final drive signal when the Boolean signal indicates that the signal applied to the input terminal of the comparator is less than the reference value or when the further signal applied to the further input terminal of the further comparator is greater than the further reference value.

5. The gate drive controller of claim 1, wherein the program instructions further cause the MCU to set a timer to a first value when the first intermediate drive signal is generated and to set the timer to a second value with the second intermediate drive signal is generated and to cause the MCU to generate the final drive signal when the timer expires regardless of the state of the Boolean signal.

6. The gate drive controller of claim 1, further comprising a temperature sensor, coupled to provide a signal representing a temperature of the power semiconductor device to the MCU;

wherein the program instructions further cause the MCU to change the reference value in response to changes in the temperature of the power semiconductor device.

7. The gate drive controller of claim 1, wherein the power semiconductor device is selected from a group consisting of an silicon IGBT, a SiC FET, a GaN FET, an AlN FET and a BN FET.

8. A gate-drive controller for a power semiconductor device comprising:

a comparator having a reference input terminal, a signal input terminal, coupled to receive an output signal of the power semiconductor device, and an output terminal, the comparator providing a Boolean output signal that is in a first state when a value of a signal applied to the signal input terminal is less than a reference value applied to the reference input terminal and in a second state when the value of the signal applied to the signal input terminal is greater than or equal to the reference value applied to the reference input terminal;

a master control unit (MCU) having a first input terminal configured to receive a trigger pulse having a rising edge and a falling edge, a second input terminal configured to receive the Boolean signal provided by the comparator, a first output terminal configured to provide a drive signal for the power semiconductor device and a second output terminal configured to provide the reference value to the comparator;

wherein the MCU includes program instructions that cause the MCU to;

in response to detecting the rising edge of the trigger pulse, generate a first reference value and a first drive signal for the power semiconductor device, the first drive signal tending to turn the power semiconductor device partially on;

generate a second drive signal for the power semiconductor device when the Boolean signal changes between the first state and the second state, wherein the second drive signal tends to turn the power semiconductor device completely on;

in response to the falling edge of the trigger pulse, generate a second reference value and a third drive signal for the power semiconductor device, the third drive signal tending to turn the power semiconductor device partially off;

generate a fourth drive signal for the power semiconductor device when the Boolean signal changes between the second state and the first state, the fourth drive signal tending to turn the power semiconductor device completely off.

9. The gate drive controller of claim 8 wherein the signal input terminal of the comparator coupled to receive a voltage signal representing a voltage across the power semiconductor device and the program instructions cause the MCU to generate the fourth drive signal when the output signal of the power semiconductor is greater than the reference value.

10. The gate drive controller of claim 8 wherein the signal input terminal of the comparator is configured to receive a voltage signal representing a current flowing through the power semiconductor device and the program instructions cause the MCU to generate the fourth drive signal when the output signal of the power semiconductor is less than the reference value.

11. The gate drive controller of claim 10 further comprising

a further comparator having further reference input terminal, a further signal input terminal coupled to receive a voltage signal representing the voltage across the power semiconductor device, the further comparator providing a further Boolean output signal that is in a first state when a value of a voltage signal applied to the further signal input terminal is less than the further value applied to the further reference input terminal and in a second state when the value of the voltage signal applied to the signal input terminal is greater than or equal to the further value applied to the further reference input terminal;

wherein the program instructions further cause the MCU to

generate the second drive signal when either the Boolean signal or the further Boolean signal changes between the first state and the second state; and

generate the fourth drive signal when either the Boolean signal or the further Boolean signal changes between the second state and the first state.

12. The gate drive controller of claim 8, wherein the program instructions further cause the MCU to:

set a timer to a first value when the first drive signal is generated;

generate the second drive signal when the timer expires regardless of the state of the Boolean signal;

to set the timer to a second value when the third drive signal is generated; and

generate the fourth drive signal when the timer expires regardless of the state of the Boolean signal.

13. The gate drive controller of claim 8, further comprising a temperature sensor, coupled to provide a signal representing a temperature of the power semiconductor device to the MCU;

wherein the program instructions further cause the MCU to change at least one of the first and second reference values in response to changes in the temperature of the power semiconductor device.

14. The gate drive controller of claim 8, wherein the power semiconductor device is selected from a group consisting of an silicon IGBT, a SiC FET, a GaN FET, an AlN FET and a BN FET.

15. The gate drive controller of claim 8, including a further comparator, having a further reference input terminal, a further signal input terminal, coupled to receive the output signal of the power semiconductor device, and a further output terminal, the further comparator providing a further Boolean output signal that is in a first state when a value of a signal applied to the further signal input terminal is less than a reference value applied to the further reference input terminal and in a second state when the value of the signal applied to the further signal input terminal is greater than or equal to the reference value applied to the further reference input terminal;

and

the program instructions cause the MCU to apply the first reference value to the comparator and the second reference value to the further comparator and to generate the fourth drive signal when the further Boolean signal changes between the second state and the first state.