State of health estimation of power converters

• US 9,494,657 B2
• Filed: 10/16/2012
• Issued: 11/15/2016
• Est. Priority Date: 10/16/2012
• Status: Active Grant

• Current Assignee: University of Utah Research Foundation (State of Utah)
• Original Assignee: University of Utah Research Foundation (State of Utah)
• Inventors: Khan, Faisal, Nasrin, Most. Sultana
• Primary Examiner(s): Koval, Melissa
• Assistant Examiner(s): Farrow, Felicia
• Application Number:
  US13/653,085
• Publication Number:
  US 20140103937A1
• Time in Patent Office: 1,491 Days
• Field of Search: 324/509, 324/537, 324/548, 324/762.08, 324/762.09, 324/764.01, 327/107, 702/182
• US Class Current: 1/1
• CPC Class Codes: G01R 31/007 using microprocessors or computers
• CPC Class Codes: G01R 31/2621 for testing field effect transistors, i.e. FET's
• CPC Class Codes: G01R 31/2839 using signal generators, power supplies or circuit analysers G01R31/2879 takes precedence; multimeters G01R15/12, network analysers G01R27/28
• CPC Class Codes: G01R 31/327 Testing of circuit interrupters, switches or circuit-breakers
• CPC Class Codes: G01R 31/40 Testing power supplies testing photovoltaic devices H02S50/10
• CPC Class Codes: G01R 31/64 Testing of capacitors
• CPC Class Codes: G01R 31/72 Testing of electric windings testing of transformers G01R31/62
• CPC Class Codes: H02S 50/10 Testing of PV devices, e.g. of PV modules or single PV cells testing of semiconductor devices during manufacturing H01L22/00
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Systems, methods and devices which utilize Spread Spectrum Time Domain Reflectometry (SSTDR) techniques to measure degradation of electronic components are provided. Such measurements may be implemented while the components “live” or otherwise functioning within an overall system. In one embodiment, monitoring a power converter in a high power system is accomplished. In this embodiment, degradation of components within the power converter (e.g. metal-oxide-semiconductor field-effect transistors (MOSFETs), capacitors, insulated-gate bipolar transistors (IGBTs), and the like) may be monitored by processing data from reflections of an SSTDR signal to determine changes in impedance, capacitance, or any other changes that may be characteristic of components degrading. For example, an aging MOSFET may experience an increase of drain to source resistance which adds additional resistance to a current path within a power converter. Such a change is able to be analyzed monitored upon processing the reflected test signals.

Claims

1. A method for estimating the state of health of an electronic component located between a plurality of nodes, said method comprising:

placing the electronic component under test while said electronic component is in a live working condition;

propagating a test signal into the electronic component, said test signal configured to be non-interfering with the functionality of the electronic component;

receiving reflections of the propagated test signal from the electronic component at a testing device; and

processing the reflected signal to determine at least one performance-degradation characteristic of the electronic component based on a predetermined relationship between the performance-degradation characteristic and a matrix of impedances indicative of impedance between each of the plurality of nodes, wherein processing the reflected signal comprises generating the matrix of impedances between the plurality of nodes based on the received reflections.

2. The method of claim 1 wherein the electronic component is a power converter.

3. The method of claim 2 wherein the power converter part of an automobile power system.

4. The method of claim 2 wherein the power converter is part of a power distribution network.

5. The method of claim 1 wherein the electronic component comprises a switching device.

6. The method of claim 5 wherein the performance degradation characteristic is an impedance change within the switching component.

7. The method of claim 1 wherein the performance degradation characteristic is a change in at least one of capacitance and equivalent series resistance of a capacitor.

8. The method of claim 1 wherein the performance degradation characteristic is a change in an inductor.

9. The method of claim 1 wherein the test signal is transmitted using spread spectrum time domain reflectometry.

10. The method of claim 1 wherein the electronic component is one or more components in a photovoltaic system.

11. The method of claim 10 further comprising processing the reflected signal to determine whether a ground fault is present in the photovoltaic system.

12. A system comprising:

a power converter including a plurality of nodes and configured to modify properties of electrical power propagating in the system; and

a state of health testing device configured to transmit a test signal into a power converter while the power converter is functioning within the system, said state of health testing device further configured to monitor reflections from the test signal and process the reflections in order to analyze a performance-degradation characteristic based on a predetermined relationship between the performance-degradation characteristic and a matrix of impedances, the performance-degradation characteristic indicative of effects that occur as a result of degradation of components within the power converter, wherein processing the reflections includes generating the matrix of impedances between the plurality of nodes within the power converter based on the received reflections.

13. The system of claim 12 wherein the system is a high voltage DC power distribution system.

14. The system of claim 12 wherein the system is an automobile power system.

15. The system of claim 12 wherein the component is at least one MOSFET and state of health testing device monitors a drain-to-source resistance (R_DS) of one or more of the MOSFETs.

16. The system of claim 12 wherein the component is an IGBT and state of health testing device monitors one or more of threshold voltage, transconductance, and collector-emitter ON voltage.

17. The system of claim 12 wherein component is at least one capacitor and state of health testing device monitors changes in one or more of equivalent series resistance and capacitance of the capacitors.

18. The system of claim 12 wherein said system includes a plurality of power converters.

19. The system of claim 18 wherein the plurality of power converters are configured to be monitored by a single state of health testing device.

20. The system of claim 18 wherein the plurality of power converters are configured to be monitored by a plurality of state of health testing devices.

21. The device of claim 12 wherein the performance-degradation characteristic is indicative of degradation of one or more of a group consisting of a MOSFET, capacitor, IGBT, and an inductor.