Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective
First Claim
1. A mirror configured to reflect radiation in an extreme-ultraviolet (EUV) wavelength range, comprising:
- a substrate (S) and a layer arrangement, wherein the layer arrangement comprises a reflective portion and a surface protecting layer portion,wherein the reflective portion comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
) such that the reflectivity of the reflective portion varies according to an angle of incidence of the EUV radiation, andwherein the surface protective layer portion is arranged between the reflective portion and substrate and comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, configured to absorb radiation in the EUV wavelength range such that the transmission of the EUV radiation through the layer arrangement amounts to less than 2%.
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Accused Products
Abstract
A mirror (1a; 1a′; 1b; 1b′; 1c; 1c′) for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P′″) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include two individual layers composed of different materials for a high refractive index layer (H′″) and a low refractive index layer (L′″), wherein the layer arrangement includes at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.
16 Citations
27 Claims
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1. A mirror configured to reflect radiation in an extreme-ultraviolet (EUV) wavelength range, comprising:
-
a substrate (S) and a layer arrangement, wherein the layer arrangement comprises a reflective portion and a surface protecting layer portion, wherein the reflective portion comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
) such that the reflectivity of the reflective portion varies according to an angle of incidence of the EUV radiation, andwherein the surface protective layer portion is arranged between the reflective portion and substrate and comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, configured to absorb radiation in the EUV wavelength range such that the transmission of the EUV radiation through the layer arrangement amounts to less than 2%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A mirror configured to reflect radiation in an extreme-ultraviolet (EUV) wavelength range, comprising:
-
a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
),wherein the layer arrangement comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, wherein the surface protecting layer (SPL, Lp) or the surface protecting layer system (SPLS) is configured to absorb radiation in the EUV wavelength range and experiences an irreversible change in volume of less than 1% under EUV radiation. - View Dependent Claims (19, 20, 21, 22)
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23. A mirror configured to reflect radiation in an extreme-ultraviolet (EUV) wavelength range, comprising:
-
a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
),wherein the layer arrangement comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, wherein the surface protecting layer (SPL, Lp) or the surface protecting layer system (SPLS) is configured to absorb radiation in the EUV wavelength range and prevents an irreversible alteration of the surface of the substrate (S) under the EUV radiation of more than 0.1 nm measured in the normal direction at a location within the irradiated region of the substrate (S) relative to the surface of the substrate (S) at a location outside the irradiated region measured in the same direction and exerts a tensile stress at least partly compensating layer stresses in the layer arrangement. - View Dependent Claims (24, 25, 26, 27)
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Specification