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Sequential circuit and semiconductor device

  • US 9,494,830 B2
  • Filed: 05/29/2014
  • Issued: 11/15/2016
  • Est. Priority Date: 06/05/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating film comprising a nitride;

    a driver circuit comprising;

    a first transistor including a first gate, a second gate, a semiconductor film between the first gate and the second gate, a second insulating film, and a third insulating film comprising a nitride, each of the second insulating film and the third insulating film between the second gate and the semiconductor film; and

    a second transistor; and

    a pixel portion comprising;

    a third transistor;

    a liquid crystal element comprising;

    a first transparent conductive film electrically connected to the third transistor;

    a first conductive film over the first transparent conductive film; and

    a liquid crystal layer between the first transparent conductive film and the first conductive film; and

    a capacitor comprising;

    a second transparent conductive film;

    the first transparent conductive film over the second transparent conductive film; and

    the third insulating film between the first transparent conductive film and the second transparent conductive film, the third insulating film is in contact with the second transparent conductive film,wherein a first portion of the first insulating film comprises the second insulating film and the third insulating film over the second insulating film,wherein a second portion of the first insulating film comprises the third insulating film in the capacitor,wherein the first gate of the first transistor is electrically connected to the second gate of the first transistor,wherein one of a source and a drain of the first transistor is configured to receive a first potential,wherein one of a source and a drain of the second transistor is configured to receive a second potential,wherein the second potential is lower than the first potential, andwherein the other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor.

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