Packages and methods of manufacture thereof

• US 9,496,196 B2
• Filed: 08/15/2014
• Issued: 11/15/2016
• Est. Priority Date: 08/15/2014
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Yee, Kuo-Chung
• Primary Examiner(s): Kim, Su C
• Assistant Examiner(s): Wilbert, David S
• Application Number:
  US14/460,735
• Publication Number:
  US 20160049385A1
• Time in Patent Office: 823 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/08225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/17181 On opposite sides of the body
• CPC Class Codes: H01L 2224/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73209 Bump and HDI connectors
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73259 Bump and HDI connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/81005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/1035 : the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1041 : Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/5385 : Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect
• CPC Class Codes: H01L 2924/19107 : off-chip wires

Abstract

Packages and methods of manufacture thereof are described. In an embodiment, a package may include a first chip package and a die structure disposed over the first chip package. In an embodiment, the first chip package may include: a molding compound; a first die within the molding compound; a first via structure and a second via structure within the molding compound at opposite lateral portions of the first die, wherein the first and second via structures extend between an active surface of the first die and a first surface of the molding compound; and a second die within the molding compound, the second die disposed at the active surface of the first die and between the first via structure and the second via structure.

Claims

1. A package comprising:

a first chip package comprising;

a molding compound;

a first die within the molding compound;

a first via structure within the molding compound at a first lateral portion of the first die, the first via structure extending between an active surface of the first die and a first surface of the molding compound;

a second via structure within the molding compound at a second lateral portion of the first die opposite the first lateral portion, the second via structure extending between the active surface of the first die and the first surface of the molding compound;

a third via structure within the molding compound laterally adjacent to and spaced apart from a first sidewall of the first die;

a fourth via structure within the molding compound laterally adjacent to and spaced apart from a second sidewall of the first die opposite the first sidewall, wherein the third via structure and the fourth via structure extend between the first surface of the molding compound and a second surface of the molding compound opposite the first surface;

a second die within the molding compound, the second die disposed at the active surface of the first die and between the first via structure and the second via structure;

a redistribution layer (RDL) disposed over the first surface of the molding compound, wherein the RDL electrically connects the first via structure and the second via structure to the third via structure and the fourth via structure respectively; and

the first die attached to a substrate with an adhesive layer; and

a die structure disposed over the first chip package.

2. The package of claim 1, wherein the die structure comprises at least one of an overlying chip or a second chip package.

3. The package of claim 2, wherein the second chip package comprises at least one of a low power double data rate die, a wide input-output memory chip, or a flash memory chip.

4. The package of claim 1, wherein the first chip package further comprises:

a plurality of first connectors disposed between the first chip package and the die structure, the plurality of first connectors electrically connecting the first chip package and the die structure to each other.

5. The package of claim 1, wherein the second die is closer to the die structure than the first die, and wherein the first surface of the molding compound faces the die structure.

6. The package of claim 1, wherein an active surface of the second die faces the active surface of the first die.

9. The package of claim 1, wherein the RDL electrically connects the first via structure and the second via structure.

10. The package of claim 1, wherein the RDL electrically connects the first via structure and the third via structure.

7. A package comprising:

a die structure disposed over a first chip package, the first chip package comprising;

a molding compound;

at least one first via and at least one second via extending between a first surface of the molding compound and a second surface of the molding compound opposite the first surface;

a first die within the molding compound and proximate the first surface of the molding compound, the first die disposed between the at least one first via and the at least one second via;

a second die within the molding compound, the second die disposed at a first surface of the first die;

at least one third via within the molding compound laterally adjacent to and spaced apart from a first sidewall of the second die;

at least one fourth via within the molding compound laterally adjacent to and spaced apart from a second sidewall of the second die opposite the first sidewall, wherein the at least one third via and the at least one fourth via extend between the first surface of the first die and the second surface of the molding compound;

a redistribution layer (RDL) disposed over the second surface of the molding compound, wherein the RDL electrically connects the at least one first via and the at least one second via to the at least one third via and the at least one fourth via respectively; and

a substrate disposed over the redistribution layer, the substrate different than the redistribution layer, the redistribution layer interposed between and in physical contact with the substrate and the second die.

11. The package of claim 7, wherein the die structure comprises at least one of an overlying chip or a second chip package.

12. The package of claim 11, wherein the second chip package comprises at least one of a low power double data rate die, a wide input-output memory chip, or a flash memory chip.

13. The package of claim 7, wherein the first chip package further comprises:

a plurality of first connectors disposed between the first chip package and the die structure, the plurality of first connectors electrically connecting the first chip package and the die structure to each other.

14. The package of claim 7, wherein the second die is closer to the die structure than the first die, and wherein the first surface of the molding compound is directed toward the die structure.

15. The package of claim 7, wherein an active surface of the second die is directed toward the active surface of the first die.

16. The package of claim 7, wherein the RDL electrically connects the at least one first via and the at least one second via.

17. The package of claim 7, wherein the RDL electrically connects the at least one first via and the at least one third via.

8. A package comprising:

a first chip package comprising;

a molding compound;

a first die within the molding compound;

a first via structure within the molding compound at a first lateral portion of the first die, the first via structure extending between an active surface of the first die and a first surface of the molding compound;

a second via structure within the molding compound at a second lateral portion of the first die opposite the first lateral portion, the second via structure extending between the active surface of the first die and the first surface of the molding compound;

a third via structure within the molding compound laterally adjacent to and spaced apart from a first sidewall of the first die;

a fourth via structure within the molding compound laterally adjacent to and spaced apart from a second sidewall of the first die opposite the first sidewall, wherein the third via structure and the fourth via structure extend between the first surface of the molding compound and a second surface of the molding compound opposite the first surface;

a second die within the molding compound, the second die disposed at the active surface of the first die;

a redistribution layer (RDL) disposed over the first surface of the molding compound, wherein the RDL electrically connects the first via structure and the second via structure to the third via structure and the fourth via structure respectively; and

a back-side substrate disposed under the second surface of the molding compound, a first side of the back-side substrate proximate the second surface of the molding compound, the back-side substrate comprising a plurality of connectors disposed on a second side of the back-side substrate opposite the first side, at least a portion of the back-side substrate attached to the first die with an adhesive layer; and

a die structure disposed over the first chip package.

18. The package of claim 8, wherein the die structure comprises at least one of an overlying chip or a second chip package.

19. The package of claim 18, wherein the second chip package comprises at least one of a low power double data rate die, a wide input-output memory chip, or a flash memory chip.

20. The package of claim 8, wherein an active surface of the second die faces the active surface of the first die.