Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
First Claim
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1. An apparatus comprising:
- a layer of glass, quartz or sapphire;
a first silicon-on-insulator (SOI) structure comprising a first insulating layer and at least one first circuit layer formed on a first side of the first insulating layer, the first SOI structure being bonded to the layer of glass, quartz or sapphire such that the at least one first circuit layer is located between the first insulating layer and the layer of glass, quartz or sapphire, wherein the first insulating layer comprises a second side opposite the first side of the first insulating layer;
an adhesive layer disposed between the layer of glass, quartz or sapphire and the first SOI structure such that the at least one first circuit layer of the first SOI structure is bonded directly to the layer of glass, quartz or sapphire using the adhesive layer; and
a second SOI structure comprising a second insulating layer and at least one second circuit layer, wherein the second insulating layer comprises a first side and a second side, the first side of the second insulating layer facing the second side of the first insulating layer and the second side of the second insulating layer is opposite the first side of the second insulating layer, wherein the at least one second circuit layer comprises at least one first passive circuit element formed on and in direct contact with the first side of the second insulating layer and at least one second passive circuit element formed on and in direct contact with the second side of the second insulating layer, the second SOI structure being bonded to the first insulating layer such that the at least one first passive circuit element is located between the second insulating layer and the first insulating layer, wherein the second side of the first insulating layer is bonded to the at least one second circuit layer.
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Abstract
A chipset includes a sheet of glass, quartz or sapphire and a first wafer having at least one first circuit layer on a first side of a first substrate layer. The first wafer is connected to the sheet such that the at least one first circuit layer is located between the first substrate layer and the sheet. A second wafer having at least one second circuit layer on a first side of a second substrate layer is connected to the first substrate layer such that the at least one second circuit layer is located between the second substrate layer and the first substrate layer. Also a method of forming a chipset.
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Citations
25 Claims
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1. An apparatus comprising:
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a layer of glass, quartz or sapphire; a first silicon-on-insulator (SOI) structure comprising a first insulating layer and at least one first circuit layer formed on a first side of the first insulating layer, the first SOI structure being bonded to the layer of glass, quartz or sapphire such that the at least one first circuit layer is located between the first insulating layer and the layer of glass, quartz or sapphire, wherein the first insulating layer comprises a second side opposite the first side of the first insulating layer; an adhesive layer disposed between the layer of glass, quartz or sapphire and the first SOI structure such that the at least one first circuit layer of the first SOI structure is bonded directly to the layer of glass, quartz or sapphire using the adhesive layer; and a second SOI structure comprising a second insulating layer and at least one second circuit layer, wherein the second insulating layer comprises a first side and a second side, the first side of the second insulating layer facing the second side of the first insulating layer and the second side of the second insulating layer is opposite the first side of the second insulating layer, wherein the at least one second circuit layer comprises at least one first passive circuit element formed on and in direct contact with the first side of the second insulating layer and at least one second passive circuit element formed on and in direct contact with the second side of the second insulating layer, the second SOI structure being bonded to the first insulating layer such that the at least one first passive circuit element is located between the second insulating layer and the first insulating layer, wherein the second side of the first insulating layer is bonded to the at least one second circuit layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 22, 23, 24, 25)
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15. An apparatus comprising:
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means for supporting a first silicon-on-insulator (SOI) structure, wherein the first SOI structure comprises a first insulating layer means for insulating and at least one first circuit means for processing signals formed on a first side of the first insulating layer means, the first SOI structure being bonded to the means for supporting such that the at least one first circuit means is located between the first insulating layer means and the means for supporting, wherein the first insulating layer means comprises a second side opposite the first side of the first insulating layer means; an adhesive layer disposed between the means for supporting and the first SOI structure such that the at least one first circuit means of the first SOI structure is bonded directly to the means for supporting using the adhesive layer; and a second SOI structure comprising a second insulating layer means and at least one second circuit means for processing signals, wherein the second insulating layer means comprises a first side and a second side, the first side of the second insulating layer means facing the second side of the first insulating layer means and the second side of the second insulating layer means is opposite the first side of the second insulating layer means, wherein the at least one second circuit means comprises at least one first passive circuit element formed on and in direct contact with the first side of the second insulating layer means and at least one second passive circuit element formed on and in direct contact with the second side of the second insulating layer means, the second SOI structure being bonded to the first insulating layer means such that the at least one first passive circuit element is located between the second insulating layer means and the first insulating layer means, wherein the second side of the first insulating layer means is bonded to the at least one second circuit means. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification