Low power semiconductor transistor structure and method of fabrication thereof
First Claim
1. An integrated circuit having transistor devices of a plurality of device types formed on a substrate, comprising:
- a first screening layer for a first device type, the first screening layer being positioned below a first gate insulator of the first device type, the first screening layer having a first dopant concentration;
a second screening layer for a second device type, the second screening layer being positioned below a second gate insulator of the second device type, the second screening layer having a second dopant concentration;
a first substantially undoped layer for the first device type being positioned above and adjacent to the first screening layer;
a second substantially undoped layer for the second device type being positioned above and adjacent to the second screening layer;
a shallow trench isolation between the first device type and the second device type;
a first source and drain region for the first device type penetrating the first substantially undoped layer and the first screening layer;
a second source and drain region for the second device type penetrating the second substantially undoped layer and the second screening layer; and
wherein a thickness of the first gate insulator is different from a thickness of the second gate insulator.
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Accused Products
Abstract
A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σVT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The semiconductor structure includes an analog device and a digital device each having an epitaxial channel layer where a single gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the digital device and one of a double and triple gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the analog device.
495 Citations
13 Claims
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1. An integrated circuit having transistor devices of a plurality of device types formed on a substrate, comprising:
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a first screening layer for a first device type, the first screening layer being positioned below a first gate insulator of the first device type, the first screening layer having a first dopant concentration; a second screening layer for a second device type, the second screening layer being positioned below a second gate insulator of the second device type, the second screening layer having a second dopant concentration; a first substantially undoped layer for the first device type being positioned above and adjacent to the first screening layer; a second substantially undoped layer for the second device type being positioned above and adjacent to the second screening layer; a shallow trench isolation between the first device type and the second device type; a first source and drain region for the first device type penetrating the first substantially undoped layer and the first screening layer; a second source and drain region for the second device type penetrating the second substantially undoped layer and the second screening layer; and wherein a thickness of the first gate insulator is different from a thickness of the second gate insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An integrated circuit having transistor devices of a plurality of device types formed on a substrate, comprising:
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a first screening layer for a first device type, the screening layer being positioned below a first gate insulator of the first device type, the screening layer having a first dopant concentration; a threshold voltage layer for a second device type, the threshold voltage layer being positioned below a second gate insulator of the second device type, the threshold voltage layer having a second dopant concentration; a substantially undoped layer for the first device type being positioned above and adjacent to the screening layer; a shallow trench isolation between the first device type and the second device type; a first source and drain region for the first device type penetrating the substantially undoped layer and the screening layer; and wherein a thickness of the first gate insulator is same to a thickness of the second gate insulator and a depth position of the threshold voltage layer is different from a depth position of the screening layer. - View Dependent Claims (10, 11, 12, 13)
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Specification