Semiconductor device including well regions with different impurity densities

• US 9,496,344 B2
• Filed: 02/26/2013
• Issued: 11/15/2016
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Tanaka, Rina, Furukawa, Akihiko, Imaizumi, Masayuki, Abe, Yuji
• Primary Examiner(s): Wright, Tucker J
• Application Number:
  US14/387,727
• Publication Number:
  US 20150048384A1
• Time in Patent Office: 1,358 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/6606 the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.

Claims

1. A semiconductor device comprising:

a wide band gap semiconductor substrate that is of a first conductive type;

a drift layer that is of the first conductive type and configured with a wide band gap semiconductor and that is formed on a first main surface of the wide band gap semiconductor substrate;

a plurality of first well regions that are of a second conductive type and that are formed in a surface layer portion of the drift layer adjacent to each other at a predetermined interval;

a second well region that is formed adjacent to each of the first well regions and toward the semiconductor substrate, has a second conductive type impurity density lower than the first well regions, and has a constant width that is narrower than a width of the first well regions to form T-shaped well configurations;

a Schottky electrode that is formed on surfaces of the drift layer and the first well regions to form a Schottky connection with the drift layer; and

an ohmic electrode that is formed on a second main surface of the semiconductor substrate which is opposite to the first main surface,

wherein at least some regions in the first well regions are not depleted when the semiconductor device is in an off-state.

2. The semiconductor device according to claim 1, wherein when the semiconductor device is in an off-state, the second well region is entirely depleted.

3. The semiconductor device according to claim 1, wherein when the semiconductor device is in an off-state, a surface layer portion of the drift layer that is between the first well regions and that is in contact with the Schottky electrode is entirely depleted by a depletion layer expanding from the first well regions adjacent to each other.

4. The semiconductor device according to claim 1, wherein the constant width of the second well region is three fourths or less of the width of each of the first well regions.

5. The semiconductor device according to claim 1, wherein in the second well region, a portion nearest to the semiconductor substrate has a second conductive type impurity density lower than a region neighboring each of the first well regions.

6. The semiconductor device according to claim 1, wherein the drift layer is provided between the second well region and the semiconductor substrate.

7. The semiconductor device according to claim 1, wherein in the second well region, a portion nearest to the semiconductor substrate has a width narrower than a region neighboring each of the first well regions.

8. The semiconductor device according to claim 1, wherein at a position at which a surface layer portion of the drift layer is connected to the Schottky electrode, a high density drift region is provided so as to have a first conductive type impurity density higher than the drift layer.

9. The semiconductor device according to claim 1, wherein the wide band gap semiconductor substrate is a silicon carbide semiconductor substrate, and the wide band gap semiconductor is a silicon carbide semiconductor.