Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
First Claim
1. A semiconductor device comprising:
- a transistor comprising;
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
a source electrode electrically connected to the oxide semiconductor film; and
a drain electrode electrically connected to the oxide semiconductor film;
wherein the oxide semiconductor film comprises a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film,wherein the first oxide semiconductor film comprises a first region in which an atomic proportion of In is larger than an atomic proportion of M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf,wherein the second oxide semiconductor film comprises a second region in which an atomic proportion of In is smaller than the atomic proportion of In of the first oxide semiconductor film, andwherein a portion of the second oxide semiconductor film which overlaps with the source electrode or the drain electrode is thicker than the first oxide semiconductor film, and a portion of the second oxide semiconductor film which does not overlap with the source electrode or the drain electrode is thinner than the first oxide semiconductor film.
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Accused Products
Abstract
The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a transistor comprising; a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source electrode electrically connected to the oxide semiconductor film; and a drain electrode electrically connected to the oxide semiconductor film; wherein the oxide semiconductor film comprises a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film, wherein the first oxide semiconductor film comprises a first region in which an atomic proportion of In is larger than an atomic proportion of M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf, wherein the second oxide semiconductor film comprises a second region in which an atomic proportion of In is smaller than the atomic proportion of In of the first oxide semiconductor film, and wherein a portion of the second oxide semiconductor film which overlaps with the source electrode or the drain electrode is thicker than the first oxide semiconductor film, and a portion of the second oxide semiconductor film which does not overlap with the source electrode or the drain electrode is thinner than the first oxide semiconductor film. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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2. A semiconductor device comprising:
a transistor comprising; a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; and a second gate electrode over the second gate insulating film, wherein the oxide semiconductor film comprises a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film, wherein the first oxide semiconductor film comprises a first region in which an atomic proportion of In is larger than an atomic proportion of M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf, wherein the second oxide semiconductor film comprises a second region in which an atomic proportion of In is smaller than the atomic proportion of In of the first oxide semiconductor film, and wherein a portion of the second oxide semiconductor film which overlaps with the source electrode or the drain electrode is thicker than the first oxide semiconductor film, and a portion of the second oxide semiconductor film which does not overlap with the source electrode or the drain electrode is thinner than the first oxide semiconductor film.
Specification