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Semiconductor device

  • US 9,496,413 B2
  • Filed: 02/25/2016
  • Issued: 11/15/2016
  • Est. Priority Date: 05/01/2012
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising the steps of:

  • forming a gate electrode;

    forming an insulating layer over the gate electrode;

    forming an oxide semiconductor layer over the insulating layer; and

    performing a heat treatment so that hydrogen in the oxide semiconductor layer moves into the insulating layer,wherein the insulating layer and the oxide semiconductor layer comprise hydrogen, andwherein a peak of a concentration profile of the hydrogen in the insulating layer and the oxide semiconductor layer is located in the insulating layer after the step of performing the heat treatment.

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