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Solderable top metal for silicon carbide semiconductor devices

  • US 9,496,421 B2
  • Filed: 07/01/2008
  • Issued: 11/15/2016
  • Est. Priority Date: 10/21/2004
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • forming an electrode on a semiconductor substrate;

    forming a passivation layer on the semiconductor substrate and disposed on an outer peripheral edge of the electrode; and

    forming a solderable contact on the electrode spaced apart from the passivation layer to form a gap between the passivation layer and the solderable contact,wherein the gap exposes a surface of the electrode between the passivation layer and the solderable contact.

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