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Coplanar integration of a direct-bandgap chip into a silicon photonic device

  • US 9,496,431 B2
  • Filed: 10/08/2014
  • Issued: 11/15/2016
  • Est. Priority Date: 10/09/2013
  • Status: Active Grant
First Claim
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1. A method for fabricating a composite device comprising:

  • providing a platform, the platform comprising;

    a base layer;

    a device layer; and

    an insulating layer between the base layer and the device layer, wherein the insulating layer comprises a different material than the base layer;

    etching the platform to form a plurality of walls in the device layer and the insulating layer, wherein the device layer and the insulating layer comprise the plurality of walls forming an opening in the device layer and the insulating layer such that;

    a portion of the base layer of the platform is exposed through the device layer and the insulating layer through the opening; and

    the opening is laterally surrounded by the plurality of walls;

    providing a chip, the chip comprising;

    a substrate comprising a III-V material; and

    an active region comprising a III-V material;

    aligning the active region with the device layer using pedestals formed in the platform;

    bonding the chip to the portion of the base layer of the platform, so that the active region is optically aligned with the device layer of the platform;

    removing at least a portion of the substrate from the chip after bonding the chip to the portion of the base layer of the platform; and

    applying a material between the chip and a wall of the plurality of walls to form an optical bridge between the chip and the wall, wherein the material between the chip and the wall has an index of refraction matched to a refractive index of the device layer or the active region of the chip.

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