Storage devices and methods of operating storage devices
First Claim
1. A method of operating a storage device comprising a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device,wherein the nonvolatile memory device comprises a plurality of memory blocks, each memory block comprising a plurality of memory cells connected to word lines and stacked a direction perpendicular to a substrate and string selection transistors connected to string selection lines,wherein, in each memory block, memory cells located at a same height from the substrate are connected to a wordline in common, andwherein the method comprises:
- receiving a read request;
performing a read operation on selected memory cells associated with a selected string selection line and a selected word line in a selected memory block in response to the read request;
performing a first reliability verification read on memory cells associated with an upper or lower word line of the selected word line and the selected string selection line in the selected memory block; and
performing a second reliability verification read on memory cells associated with an upper or lower word line of the selected word line and an unselected string selection line in the selected memory block.
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Abstract
A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.
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Citations
20 Claims
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1. A method of operating a storage device comprising a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device,
wherein the nonvolatile memory device comprises a plurality of memory blocks, each memory block comprising a plurality of memory cells connected to word lines and stacked a direction perpendicular to a substrate and string selection transistors connected to string selection lines, wherein, in each memory block, memory cells located at a same height from the substrate are connected to a wordline in common, and wherein the method comprises: -
receiving a read request; performing a read operation on selected memory cells associated with a selected string selection line and a selected word line in a selected memory block in response to the read request; performing a first reliability verification read on memory cells associated with an upper or lower word line of the selected word line and the selected string selection line in the selected memory block; and performing a second reliability verification read on memory cells associated with an upper or lower word line of the selected word line and an unselected string selection line in the selected memory block. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A storage device comprising:
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a nonvolatile memory device comprising a plurality of memory blocks, each memory block comprising a plurality of memory cells connected to word lines and stacked a direction perpendicular to a substrate and string selection transistors connected to string selection lines; and a memory controller configured to receive a read request from an external host device, transmit a first read command and a first address to the nonvolatile memory device in response to the read request, receive first data of selected memory cells associated with a selected string selection line and a selected memory block of a selected memory block corresponding to the first address from the nonvolatile memory device, and output the first data to the external host device, wherein, in each memory block, memory cells located at a same height from the substrate are connected to a word line in common, wherein the memory controller is further configured to transmit a second read command and a second address to the nonvolatile memory device, receive second data of memory cells associated with an upper or lower word line of the selected word line and the selected string selection line of the selected memory block, and check reliability of the second data, and wherein the memory controller is further configured to transmit a third read command and a third address to the nonvolatile memory device, receive third data of memory cells associated with an upper or lower word line of the selected word line and an unselected string selection line of the selected memory block, and check reliability of the third data. - View Dependent Claims (14, 15, 16)
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17. A method of operating a storage device comprising a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device,
wherein the nonvolatile memory device comprises a plurality of memory blocks, each memory block comprising a plurality of memory cells connected to word lines and stacked a direction perpendicular to a substrate and string selection transistors connected to string selection lines, wherein, in each memory block, memory cells located at a same height from the substrate are connected to a wordline in common, and wherein the method comprises: -
receiving a read request; performing a read operation on selected memory cells associated with a selected string selection line and a selected word line in a selected memory block in response to the read request; and when a read count reaches a critical value; performing a first reliability verification read on memory cells associated with an upper or lower word line of the selected word line and the selected string selection line in the selected memory block; and performing a second reliability verification read on memory cells associated with an upper or lower word line of the selected word line and an unselected string selection line in the selected memory block. - View Dependent Claims (18, 19, 20)
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Specification