Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
First Claim
1. A method for performing chamber-to-chamber matching of etch rates based on a model etch rate, the method comprising:
- receiving a voltage and current measured at an output of a radio frequency (RF) generator of a first plasma system;
calculating a first model etch rate based on the voltage and current, and a power, the power calculated based on the voltage and current and a phase between the voltage and current;
receiving a voltage and current measured at an output of an RF generator of a second plasma system;
determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system;
comparing the second model etch rate with the first model etch rate; and
adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate,wherein the method is executed by a processor.
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Abstract
A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second model etch rate with the first model etch rate. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.
155 Citations
23 Claims
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1. A method for performing chamber-to-chamber matching of etch rates based on a model etch rate, the method comprising:
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receiving a voltage and current measured at an output of a radio frequency (RF) generator of a first plasma system; calculating a first model etch rate based on the voltage and current, and a power, the power calculated based on the voltage and current and a phase between the voltage and current; receiving a voltage and current measured at an output of an RF generator of a second plasma system; determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system; comparing the second model etch rate with the first model etch rate; and adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate, wherein the method is executed by a processor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for performing in-chamber matching of etch rates based on a model etch rate, the method comprising:
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receiving a voltage and current measured at a first time at an output of a radio frequency (RF) generator of a plasma system; calculating a first model etch rate based on the voltage, the current, and a power, the power calculated based on a phase between the voltage and the current; receiving a voltage and a current measured at a second time at the output of the RF generator; calculating a second model etch rate based on the voltage measured at the second time, the current measured at the second time, and a power, the power calculated based on a phase between the voltage measured at the second time and the current measured at the second time; comparing the first model etch rate with the second model etch rate; and adjusting power at the output of the RF generator to achieve the first model etch rate upon determining that the second model etch rate does not match the first model etch rate, wherein the method is executed by a processor. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A first plasma system comprising:
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a radio frequency (RF) generator for generating an RF signal, the RF generator including an output for facilitating transfer of the RF signal; a complex impedance sensor coupled to the output for measuring a voltage and current of the RF signal; a plasma chamber for generating plasma; an impedance matching circuit coupled to the RF generator via a cable and coupled to the plasma chamber via an RF transmission line for modifying the RF signal to generate a modified RF signal; wherein the plasma chamber is configured to generate the plasma when the modified RF signal is received from the impedance matching circuit; a processor coupled to the complex impedance sensor for; receiving the voltage and current measured at the output of the RF generator; calculating a first model etch rate based on the voltage and current, and a power, the power calculated based on the voltage and current and a phase between the voltage and current; receiving a voltage and current measured at an output of an RF generator of a second plasma system; determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system; comparing the second model etch rate with the first model etch rate; and adjusting a power at the output of the RF generator of the first plasma system to achieve the first model etch rate upon determining that the second model etch rate does not match the first model etch rate. - View Dependent Claims (23)
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Specification