Selective formation of metallic films on metallic surfaces
First Claim
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
- cleaning the substrate;
forming a surface termination on the second dielectric surface;
after cleaning carrying out one or more deposition cycles at a temperature of less than 150°
C., each cycle comprising;
contacting the substrate with a first precursor; and
contacting the substrate with a second precursor comprising a metal,wherein deposition on the first metal surface relative to the second dielectric surface has a selectivity of greater than about 50%.
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Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
98 Citations
31 Claims
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
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cleaning the substrate; forming a surface termination on the second dielectric surface; after cleaning carrying out one or more deposition cycles at a temperature of less than 150°
C., each cycle comprising;contacting the substrate with a first precursor; and contacting the substrate with a second precursor comprising a metal, wherein deposition on the first metal surface relative to the second dielectric surface has a selectivity of greater than about 50%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for selectively depositing a film on a first metal surface of a substrate relative to a second dielectric surface of the substrate, the method comprising:
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conducting a dielectric restoration step; carrying out one or more deposition cycles at a temperature of less than 150°
C., each cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second precursor comprising a metal selected from W, Ta, Nb, Ti, Mo and V,wherein deposition on the first metal surface relative to the second dielectric surface is greater than about 50% selective. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
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cleaning the substrate; forming a surface termination on the second dielectric surface; after cleaning carrying out one or more deposition cycles at a temperature of less than 150°
C., each cycle comprising;exposing the substrate to a first precursor; and exposing the substrate to a second precursor comprising a metal, wherein a thin film is selectively deposited on the first metal surface relative to the second dielectric surface and the selectivity is greater than about 50%. - View Dependent Claims (29, 30, 31)
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Specification