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Semiconductor device and method of fabricating the same

  • US 9,502,406 B1
  • Filed: 08/28/2015
  • Issued: 11/22/2016
  • Est. Priority Date: 07/15/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate including a first region and a second region;

    a first trench and a second trench disposed on the first and second regions, respectively;

    a first gate pattern provided in the first trench, the first gate pattern including a first gate insulating layer and a first gate electrode;

    a second gate pattern provided in the second trench, the second gate pattern including a second gate insulating layer and a second gate electrode; and

    an interlayer insulating layer enclosing the first and second gate patterns,wherein the first gate insulating layer is thicker than the second gate insulating layer,wherein the second trench has a width increasing in a direction away from the substrate, andwherein a top entrance and a bottom surface of the first trench have substantially the same width.

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