Integrating a planar field effect transistor (FET) with a vertical FET
First Claim
1. A method of integrating a planar field-effect transistor (FET) with a vertical FET, comprising:
- masking and etching a first semiconductor of the vertical FET to form a fin;
providing additional masking, additional etching, doping and depositions to isolate a bottom source/drain (S/D) region of the vertical FET;
depositing spacer dielectric on the bottom S/D region to form a spacer on the bottom S/D region;
etching back the fin to expose one or more vertical sections of the fin;
depositing gate metals on the first semiconductor and a second semiconductor of the planar FET;
etching a vertical gate for the vertical FET and a planar gate for the planar FET from the gate metals deposited using a shared gate mask, wherein the vertical gate is perpendicular to and extends across the first semiconductor, and the planar gate is perpendicular to and extends across the second semiconductor;
forming a gate dielectric isolating the second semiconductor from the planar gate by removing a portion of spacer and replacing the portion of the spacer removed with a high voltage gate dielectric layer;
depositing dielectric on the fin;
etching the dielectric deposited on the fin to expose one or more portions of the fin;
growing epitaxy on the one or more exposed portions of the fin;
masking and etching contact openings for contacts of the vertical FET and the planar FET;
forming silicide regions in S/D regions of the vertical FET and source and drain regions of the planar FET;
depositing contact metal in the silicide regions to form the contacts of the vertical FET and the planar FET; and
planarizing the contacts of the vertical FET and the planar FET.
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Accused Products
Abstract
One embodiment provides a method of integrating a planar field-effect transistor (FET) with a vertical FET. The method comprises masking and etching a semiconductor of the vertical FET to form a fin, and providing additional masking, additional etching, doping and depositions to isolate a bottom source/drain (S/D) region. A dielectric is formed on the bottom S/D region to form a spacer. The method further comprises depositing gate metals, etching a vertical gate for the vertical FET and a planar gate for the planar FET using a shared gate mask, depositing dielectric, etching the dielectric to expose one or more portions of the fin, growing epitaxy on a top S/D region, masking and etching S/D contact openings for the bottom S/D region, forming silicide regions in S/D regions, depositing contact metal in the silicide regions to form contacts, and planarizing the contacts.
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Citations
10 Claims
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1. A method of integrating a planar field-effect transistor (FET) with a vertical FET, comprising:
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masking and etching a first semiconductor of the vertical FET to form a fin; providing additional masking, additional etching, doping and depositions to isolate a bottom source/drain (S/D) region of the vertical FET; depositing spacer dielectric on the bottom S/D region to form a spacer on the bottom S/D region; etching back the fin to expose one or more vertical sections of the fin; depositing gate metals on the first semiconductor and a second semiconductor of the planar FET; etching a vertical gate for the vertical FET and a planar gate for the planar FET from the gate metals deposited using a shared gate mask, wherein the vertical gate is perpendicular to and extends across the first semiconductor, and the planar gate is perpendicular to and extends across the second semiconductor; forming a gate dielectric isolating the second semiconductor from the planar gate by removing a portion of spacer and replacing the portion of the spacer removed with a high voltage gate dielectric layer; depositing dielectric on the fin; etching the dielectric deposited on the fin to expose one or more portions of the fin; growing epitaxy on the one or more exposed portions of the fin; masking and etching contact openings for contacts of the vertical FET and the planar FET; forming silicide regions in S/D regions of the vertical FET and source and drain regions of the planar FET; depositing contact metal in the silicide regions to form the contacts of the vertical FET and the planar FET; and planarizing the contacts of the vertical FET and the planar FET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification