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Semiconductor device structure having multi-layered isolation trench structures

  • US 9,502,499 B2
  • Filed: 02/13/2015
  • Issued: 11/22/2016
  • Est. Priority Date: 02/13/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device structure, comprising:

  • a substrate having a first trench between a first active region and a second active region of the substrate; and

    an isolation structure in the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, a first thickness of the insulating layer is greater than a second thickness of the liner layer, a first portion of the insulating layer and a second portion of the isolation layer are outside of the first trench, and a first top surface of the first portion is aligned with a second top surface of the second portion.

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