Semiconductor device structure having multi-layered isolation trench structures
First Claim
1. A semiconductor device structure, comprising:
- a substrate having a first trench between a first active region and a second active region of the substrate; and
an isolation structure in the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, a first thickness of the insulating layer is greater than a second thickness of the liner layer, a first portion of the insulating layer and a second portion of the isolation layer are outside of the first trench, and a first top surface of the first portion is aligned with a second top surface of the second portion.
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Accused Products
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first trench between a first active region and a second active region of the substrate. The semiconductor device structure includes an isolation structure in the first trench. The isolation structure includes a liner layer, an insulating layer, and an isolation layer. The liner layer covers an inner wall and a bottom surface of the first trench. The insulating layer covers the liner layer and has a second trench in the first trench. The isolation layer is over the insulating layer and fills the second trench. A first thickness of the insulating layer is greater than a second thickness of the liner layer.
24 Citations
20 Claims
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1. A semiconductor device structure, comprising:
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a substrate having a first trench between a first active region and a second active region of the substrate; and an isolation structure in the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, a first thickness of the insulating layer is greater than a second thickness of the liner layer, a first portion of the insulating layer and a second portion of the isolation layer are outside of the first trench, and a first top surface of the first portion is aligned with a second top surface of the second portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device structure, comprising:
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a substrate having a first fin structure and a second fin structure, wherein the substrate has a first trench between the first fin structure and the second fin structure; an isolation structure filling a first portion of the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, and a first thickness of the insulating layer is greater than a second thickness of the liner layer; and a gate stack over the first fin structure and the isolation structure. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A semiconductor device structure, comprising:
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a substrate having a first fin structure and a second fin structure, wherein the substrate has a first trench between the first fin structure and the second fin structure; an isolation structure filling a first portion of the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, a first thickness of the insulating layer is greater than a second thickness of the liner layer, and the isolation layer comprises nitrogen; and a gate stack over the first fin structure and the isolation structure. - View Dependent Claims (17, 18, 19, 20)
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Specification