Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate having a first major surface and a second major surface facing each other;
a drift layer of a first conductivity type on the first major surface;
a first well of a second conductivity type in an upper portion of the drift layer disposed in a center of the semiconductor device;
a diffusion layer of a first conductivity type in an upper portion of the first well;
a second well of a second conductivity type in another upper portion of the drift layer disposed in a peripheral region of the semiconductor device;
a first electrode disposed above the first major surface of the semiconductor substrate and electrically connected to the first well and the second well;
a second electrode under the second major surface of the semiconductor substrate;
a first gate insulating film on the first well, a second gate insulating film on the second well;
a field oxide film on the second well;
a gate electrode on the second gate insulating film and the field oxide film; and
a gate wiring film including a silicide and disposed on the field oxide film;
whereina bottom surface of the gate wiring contacts a top surface of the field oxide; and
the gate wiring contacts a side portion of the gate electrode disposed further from the center of the semiconductor device.
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Accused Products
Abstract
In a cell region of a first major surface of a semiconductor substrate of a first conductivity type, a first well of a second conductivity type is in an upper surface. A diffusion region of a first conductivity type is in the upper surface in the first well. A first gate insulating film is on the first well, and a first gate electrode on the first gate insulating film. A second well of a second conductivity type is in the upper surface of the first major surface on a peripheral portion of the cell region. A second gate insulating film is on the second well, and a thick field oxide film is on the peripheral side of the second gate insulating film. A second gate electrode is sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode. A first electrode is connected to the first well, the second well and the diffusion region. A second electrode is connected on a second major surface of the semiconductor substrate. A gate wiring is on the field oxide film, going around a periphery of the cell region, and electrically connected to the second gate electrode. The gate wiring is a silicide of a constituting substance of the second gate electrode.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a first major surface and a second major surface facing each other; a drift layer of a first conductivity type on the first major surface; a first well of a second conductivity type in an upper portion of the drift layer disposed in a center of the semiconductor device; a diffusion layer of a first conductivity type in an upper portion of the first well; a second well of a second conductivity type in another upper portion of the drift layer disposed in a peripheral region of the semiconductor device; a first electrode disposed above the first major surface of the semiconductor substrate and electrically connected to the first well and the second well; a second electrode under the second major surface of the semiconductor substrate;
a first gate insulating film on the first well, a second gate insulating film on the second well;a field oxide film on the second well; a gate electrode on the second gate insulating film and the field oxide film; and a gate wiring film including a silicide and disposed on the field oxide film;
whereina bottom surface of the gate wiring contacts a top surface of the field oxide; and the gate wiring contacts a side portion of the gate electrode disposed further from the center of the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a semiconductor substrate having a first major surface and a second major surface facing each other; a drift layer of a first conductivity type on the first major surface; a first well of a second conductivity type in an upper portion of the drift layer disposed in a center of the semiconductor device; a diffusion layer of a first conductivity type in an upper portion of the first well; a second well of a second conductivity type in another upper portion of the drift layer disposed in a peripheral region of the semiconductor device; a first electrode above the first major surface of the semiconductor substrate and electrically connected to the first well and the second well; a second electrode under the second major surface of the semiconductor substrate;
a first gate insulating film on the first well;
a second gate insulating film on the second well;a field oxide film on the second well, a gate electrode on the second gate insulating film and the field oxide film; an interlayer insulating film disposed on the gate electrode and having a contact hole; and a gate wiring including a silicide and disposed on an the field oxide film at a bottom of the contact hole of the interlayer insulating film; wherein the gate wiring is further disposed under the interlayer insulating film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a semiconductor substrate having a first major surface and a second major surface facing each other; a drift layer of a first conductivity type on the first major surface; a first well of a second conductivity type in an upper portion of the drift layer disposed in a center of the semiconductor device; a diffusion layer of a first conductivity type in an upper portion of the first well; a second well of a second conductivity type in another upper portion of the drift layer disposed in a peripheral region of the semiconductor device; a first electrode above the first major surface of the semiconductor substrate and electrically connected to the first well and the second well; a second electrode under the second major surface of the semiconductor substrate; a first gate insulating film on the first well; a second gate insulating film on the second well; a field oxide film on the second well; a gate electrode on the second gate insulating film and the field oxide film; an interlayer insulating film disposed on the gate electrode and having a contact hole; and a gate wiring including a silicide and disposed on the field oxide film at a bottom of the contact hole of the interlayer insulating film;
wherein;
the drift layer has a first impurity concentration in a first range of 1×
1013 cm−
3 to 1×
1018 cm−
3;the second well has a second impurity concentration in a second range of 1×
1015 cm−
3 to 1×
1019 cm−
3; and
the first impurity concentration exceeds the second impurity concentration only in the vicinity of an outer surface of the drift layer.
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Specification