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Semiconductor device and fabricating method thereof

  • US 9,502,555 B2
  • Filed: 05/02/2013
  • Issued: 11/22/2016
  • Est. Priority Date: 06/15/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate comprising a trench;

    a first electrode disposed on a bottom of the trench;

    a second electrode disposed on the first electrode, a first insulating layer being disposed between the first electrode and the second electrode;

    a first contact arranged to contact with an extension of the first electrode; and

    a second contact arranged to contact with an extension of the second electrode,wherein the extension of the first electrode extends in a first direction of the substrate, and the extension of the second electrode extends in a second direction of the substrate, the second direction being perpendicular to the first direction.

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