Semiconductor device and fabricating method thereof
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate comprising a trench;
a first electrode disposed on a bottom of the trench;
a second electrode disposed on the first electrode, a first insulating layer being disposed between the first electrode and the second electrode;
a first contact arranged to contact with an extension of the first electrode; and
a second contact arranged to contact with an extension of the second electrode,wherein the extension of the first electrode extends in a first direction of the substrate, and the extension of the second electrode extends in a second direction of the substrate, the second direction being perpendicular to the first direction.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a substrate comprising a trench; a first electrode disposed below the trench; a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged in a first direction of the substrate and connected to the first electrode; and a second contact arranged in second direction that is different from the first direction, the second contact being connected to the second electrode.
13 Citations
13 Claims
-
1. A semiconductor device comprising:
-
a substrate comprising a trench; a first electrode disposed on a bottom of the trench; a second electrode disposed on the first electrode, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged to contact with an extension of the first electrode; and a second contact arranged to contact with an extension of the second electrode, wherein the extension of the first electrode extends in a first direction of the substrate, and the extension of the second electrode extends in a second direction of the substrate, the second direction being perpendicular to the first direction.
-
-
2. The semiconductor device comprising:
-
a substrate comprising a trench; a first electrode disposed below the trench; a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged to contact with an extension of the first electrode extending in a first direction of the substrate; and a second contact arranged to contact with an extension of the second electrode extending in a second direction that is different from the first direction, wherein the first electrode is located below the first contact and does not overlap with the second electrode along the second direction, and the second electrode is located below the second contact and does not overlap with the first electrode along the first direction. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. An MOS transistor comprising:
-
a trench disposed in a substrate; a first electrode disposed in a lower portion of the trench; a second electrode disposed in an upper portion of the trench, the first and the second electrodes separated by an insulating layer; a first contact arranged to contact with an extension of the first electrode; and a second contact arranged to contact with an extension of the second electrode, wherein the first electrode is located below the first contact and does not overlap with the second electrode along the second direction, and the second electrode is located below the second contact and does not overlap with the first electrode along the first direction.
-
-
13. A semiconductor device, comprising:
-
a substrate comprising a trench; a first electrode disposed below the trench; a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged to contact with an extension of the first electrode; and a second contact arranged to contact with an extension of the second electrode, wherein the first electrode is located below the first contact and does not overlap with the second electrode along the second direction, and the second electrode is located below the second contact and does not overlap with the first electrode along the first direction.
-
Specification