Bottom-gate transistor including an oxide semiconductor layer contacting an oxygen-rich insulating layer
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer;
a source electrode layer over the oxide semiconductor layer, the source electrode layer being electrically connected to the oxide semiconductor layer;
a drain electrode layer over the oxide semiconductor layer, the drain electrode layer being electrically connected to the oxide semiconductor layer;
an insulating layer comprising silicon oxide over and in contact with the oxide semiconductor layer; and
an aluminum oxide film over and in contact with the insulating layer,wherein the aluminum oxide film comprises magnesium or titanium,wherein the insulating layer comprises a region containing oxygen in excess of a stoichiometric composition,wherein the aluminum oxide film has a resistivity greater than or equal to 1×
1010 Ω
m and less than or equal to 1×
1019 Ω
m, andwherein a thickness of the aluminum oxide film is greater than or equal to 3 nm and less than or equal to 10 nm.
1 Assignment
0 Petitions
Accused Products
Abstract
A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and a metal film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the metal film is oxidized to form a metal oxide film. Further, resistivity of the metal oxide film is greater than or equal to 1×1010 Ωm and less than or equal to 1×1019 Ωm.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer; a source electrode layer over the oxide semiconductor layer, the source electrode layer being electrically connected to the oxide semiconductor layer; a drain electrode layer over the oxide semiconductor layer, the drain electrode layer being electrically connected to the oxide semiconductor layer; an insulating layer comprising silicon oxide over and in contact with the oxide semiconductor layer; and an aluminum oxide film over and in contact with the insulating layer, wherein the aluminum oxide film comprises magnesium or titanium, wherein the insulating layer comprises a region containing oxygen in excess of a stoichiometric composition, wherein the aluminum oxide film has a resistivity greater than or equal to 1×
1010 Ω
m and less than or equal to 1×
1019 Ω
m, andwherein a thickness of the aluminum oxide film is greater than or equal to 3 nm and less than or equal to 10 nm. - View Dependent Claims (2, 3, 4)
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5. A display device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer; a source electrode layer over the oxide semiconductor layer, the source electrode layer being electrically connected to the oxide semiconductor layer; a drain electrode layer over the oxide semiconductor layer, the drain electrode layer being electrically connected to the oxide semiconductor layer; an insulating layer comprising silicon oxide over and in contact with the oxide semiconductor layer; an aluminum oxide film over and in contact with the insulating layer; an interlayer insulating layer over the aluminum oxide film; and a light-emitting element over the interlayer insulating layer, wherein the aluminum oxide film comprises magnesium or titanium, wherein the insulating layer comprises a region containing oxygen in excess of a stoichiometric composition, wherein the aluminum oxide film has a resistivity greater than or equal to 1×
1010 Ω
m and less than or equal to 1×
1019 Ω
m, andwherein a thickness of the aluminum oxide film is greater than or equal to 3 nm and less than or equal to 10 nm. - View Dependent Claims (6, 7, 8)
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Specification