High energy invisible light light emitting diode having safety indication

• US 9,502,621 B2
• Filed: 03/23/2015
• Issued: 11/22/2016
• Est. Priority Date: 03/23/2015
• Status: Expired due to Fees

• Current Assignee: High Power Opto., Inc.
• Original Assignee: High Power Opto., Inc.
• Inventors: Huang, Kuo-Hsin, Chen, Fu-Bang, Huang, Shih-Hsien, Yen, Wei-Yu, Wang, Yen-Chin
• Primary Examiner(s): WARD, ERIC A
• Application Number:
  US14/665,959
• Publication Number:
  US 20160284945A1
• Time in Patent Office: 610 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

The present invention includes a safety indication structure a high energy invisible light light emitting structure and two potential applying layers. The high energy invisible light light emitting structure includes a high energy invisible light light emitting layer that receives a forward to emit invisible light, and a P-type semiconductor layer and an N-type semiconductor layer respectively disposed at two sides of the high energy invisible light light emitting layer. The two potential applying layers are respectively in contact with the P-type semiconductor layer and the N-type semiconductor layer. The safety indication structure includes a photoluminescent light emitting layer disposed on the high energy invisible light light emitting structure. When the high energy invisible light light emitting structure emits invisible light, the photoluminescent light emitting layer absorbs and converts the invisible light to visible light, which serves as a signal warning for danger to ensure user safety.

Claims

1. A high energy invisible light light emitting diode (LED) having safety indication, comprising:

a high energy invisible light light emitting structure, sequentially stacking and comprising a P-type semiconductor layer, a high energy invisible light light emitting layer that receives a forward bias to emit invisible light, and an N-type semiconductor layer, the N-type semiconductor layer comprising a light exiting surface away from the high energy invisible light light emitting layer;

two potential applying layers, respectively being in contact with the P-type semiconductor layer and the N-type semiconductor layer; and

a safety indication structure, deposed on the high energy invisible light light emitting structure, comprising a semiconductor layer contacting with the light exiting surface directly and a photoluminescent light emitting layer absorbing and converting invisible light to visible light and contacting with the semiconductor layer directly, wherein the photoluminescent light emitting layer comprises a plurality of hollow regions to reveal invisible light directly and forming a three-dimensional structure which is partially hollow on the light exiting surface,

wherein the safety indication structure is disposed on a partial region of the light exiting surface, and

wherein the safety indication structure is one of numeric, text, and text and numeric representations.

2. The high energy invisible light LED having safety indication of claim 1, wherein a light emitting wavelength of the high energy invisible light light emitting layer is 200 nm to 380 nm.

3. The high energy invisible light LED having safety indication of claim 1, wherein a horizontal planar contour of the three-dimensional structure of the safety indication structure is selected from one of a circle, a hexagon, a pentagon, a quadrilateral cone and a triangle.

4. The high energy invisible light LED having safety indication of claim 1, wherein a light emitting wavelength of the photoluminescent light emitting layer is 410 nm to 560 nm.

5. The high energy invisible light LED having safety indication of claim 1, wherein a material of the photoluminescent light emitting layer is a nitride.

6. The high energy invisible light LED having safety indication of claim 5, wherein the photoluminescent light emitting layer is a non-doped structure or doped with one of magnesium and silicon.

7. The high energy invisible light LED having safety indication of claim 1, wherein a thickness of the photoluminescent light emitting layer is 0.1 μ

m to 2 μ

m.

8. The high energy invisible light LED having safety indication of claim 1, wherein a part of high energy converted low energy by the photoluminescent light emitting layer is smaller than 30%.

9. The high energy invisible light LED having safety indication of claim 8, wherein another semiconductor layer is further disposed on the photoluminescent light emitting layer.