Wafer level photonic devices dies structure and method of making the same

• US 9,502,627 B2
• Filed: 12/28/2015
• Issued: 11/22/2016
• Est. Priority Date: 07/21/2011
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Yu, Chih-Kuang, Kuo, Hung-Yi
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US14/981,239
• Publication Number:
  US 20160118562A1
• Time in Patent Office: 330 Days
• Field of Search: 257/98, 257/99
• US Class Current: 1/1
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device includes a first epi-structure with a top surface and a bottom surface opposite to the top surface, a first metal element and a second metal element disposed on the bottom surface, a first through-via, a conductive element disposed on the top surface, and a phosphor layer disposed on the top surface and covering the conductive element. The first epi-structure includes a first doped semiconductor layer, a second doped semiconductor layer closer to the bottom surface than the first doped semiconductor layer, and a light-emitting layer disposed between the first and second doped semiconductor layers. The first through-via extends through the first doped semiconductor layer and the second doped semiconductor layer and is electrically connected to the first doped semiconductor layer and the second metal element. The conductive element is in a configuration to expose a portion of the top surface, and electrically connected to the first through-via.

Claims

1. A light-emitting device, comprising:

a first epi-structure having a top surface and a bottom surface opposite to the top surface and comprising;

a first doped semiconductor layer;

a second doped semiconductor layer closer to the bottom surface than the first doped semiconductor layer; and

a light-emitting layer disposed between the first and second doped semiconductor layers;

a first metal element disposed on the bottom surface, and electrically connected to the second doped semiconductor layer;

a second metal element disposed on the bottom surface;

a first through-via extending through the first doped semiconductor layer and the second doped semiconductor layer and electrically connected to the first doped semiconductor layer and the second metal element;

a conductive element disposed on the top surface in a configuration to expose a portion of the top surface, and electrically connected to the first through-via; and

a phosphor layer disposed on the top surface and covering the conductive element.

2. The light-emitting device of claim 1, wherein the conductive element comprises a plurality of conductive lines.

3. The light-emitting device of claim 1, wherein the conductive element comprises a transparent conductive material.

4. The light-emitting device of claim 1, wherein the first doped conductive layer comprises a roughened surface.

5. The light-emitting device of claim 1, wherein the second metal element is directly arranged under the first through-via.

6. The light-emitting device of claim 1, wherein the first epi-structure and the phosphor layer are directly connected with each other.

7. The light-emitting device of claim 1, wherein first epi-structure further comprises a side surface between the top surface and the bottom surface and devoid of the phosphor layer.

8. The light-emitting device of claim 1, further comprising a reflector disposed between the second doped semiconductor layer and the first metal element.

9. The light-emitting device of claim 1, further comprising a substrate, the substrate having an upper surface facing to the bottom surface, a first conductive pad, and a second conductive pad, wherein the first conductive pad and the second conductive pad are disposed on the upper surface.

10. The light-emitting device of claim 9, wherein the first conductive pad is electrically connected to the first metal element.

11. The light-emitting device of claim 9, wherein the first epi-structure and the substrate are directly connected with each other.

12. The light-emitting device of claim 9, wherein the substrate comprises a material of silicon.

13. The light-emitting device of claim 1, further comprising a second epi-structure electrically connected to the first epi-structure.

14. The light-emitting device of claim 13, further comprising a trench separating the first epi-structure and the second epi-structure.

15. The light-emitting device of claim 13, wherein the second epi-structure comprises a third doped semiconductor layer, and a fourth doped semiconductor layer having a different type of conductivity from the third doped semiconductor layer.

16. The light-emitting device of claim 15, wherein the second epi-structure further comprises a third metal element electrically connected to the third doped semiconductor layer.

17. The light-emitting device of claim 15, wherein the first doped semiconductor layer and the third doped semiconductor layer have the same type of conductivity.

18. The light-emitting device of claim 15, further comprising a second through-via extending through the third doped semiconductor layer and the fourth doped semiconductor layer.

19. The light-emitting device of claim 18, wherein the second through-via is electrically connected to the third doped semiconductor layer and the third metal element.