Pressure sensors and methods of making the same

• US 9,506,827 B2
• Filed: 10/15/2014
• Issued: 11/29/2016
• Est. Priority Date: 10/15/2014
• Status: Active Grant

• Current Assignee: Zhejiang Dun'An Artificial Environmental Company Limited
• Original Assignee: Dunan Sensing, LLC
• Inventors: Kwa, Tom
• Primary Examiner(s): WALSH, RYAN D
• Application Number:
  US14/515,470
• Publication Number:
  US 20160109314A1
• Time in Patent Office: 776 Days
• US Class Current: 1/1
• CPC Class Codes: G01L 19/0609 Pressure pulsation damping arrangements
• CPC Class Codes: G01L 19/0618 Overload protection
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: G01L 9/0016 of a diaphragm
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively

Abstract

A pressure sensor assembly comprising: three stacked silicon wafers which form a support, a sensor and a cover wherein the sensor includes a cavity extending from the bottom of the sensor up towards the top of the sensor to form a cavity bottom and a diaphragm; a dielectric layer covering the bottom of the sensor and the cavity and wherein the support is coupled to the dielectric layer along the bottom of the sensor; a plurality of ports located on a top of the support within an area defined by the cavity, the plurality of ports extending through the support to its bottom and wherein the cover is coupled to the top of the sensor covering the diaphragm; and, a second cavity cut into a bottom of the cover wherein the second cavity is sized and positioned to surround the diaphragm.

Claims

1. A pressure sensor assembly comprising:

a first silicon wafer with a top and a bottom;

a cavity formed in the silicon wafer, the cavity extending from the bottom of the first silicon wafer up towards the top of the first silicon wafer to form a cavity bottom such that a diaphragm is formed between the cavity bottom and the top of the first silicon wafer;

an electrical circuit formed by a conductive layer deposited on the top of the first silicon wafer;

a second silicon wafer coupled along the bottom of the first silicon wafer and covering the cavity to form a chamber;

a dielectric layer that electrically isolates an interior of the chamber from the first silicon wafer;

a plurality of ports located on a top of the second silicon wafer within an area defined by the cavity, the plurality of ports extending through the second silicon wafer to a bottom of the second silicon wafer;

a third silicon wafer coupled to the top of the first silicon wafer such that the third silicon wafer covers the diaphragm; and

,

a second cavity cut into a bottom of the third silicon wafer wherein the second cavity is sized and positioned such that the second cavity surrounds the diaphragm.

2. The pressure sensor assembly of claim 1, wherein a depth of the second cavity is designed to mechanically limit motion of the diaphragm to less than 3 times a full-scale pressure displacement.

3. The pressure sensor assembly of claim 1, further comprising an electrical contact located on the top of the diaphragm and a second electrical contact located above the electrical contact on a bottom of the second cavity.

4. The pressure sensor assembly of claim 3, wherein the electrical contact will come into contact and form a closed circuit with the second electrical contact when the diaphragm displaces into a full depth of the second cavity.

5. The pressure sensor assembly of claim 1, wherein a depth of the second cavity is less than or equal 0.9 μ

m.

6. The pressure sensor assembly of claim 1, wherein the cavity bottom is at least 80% of the way to the top of the first silicon wafer.

7. The pressure sensor assembly of claim 1, wherein the dielectric layer is made of silicon dioxide or silicon nitride.

8. The pressure sensor assembly of claim 1, further comprising a substrate coupled to the bottom of the second silicon wafer, the substrate including a channel that runs from a top of the substrate to a bottom of the substrate and wherein a channel opening at the top of the substrate covers a plurality of port openings of the ports on the bottom of the second silicon wafer.

9. The pressure sensor assembly of claim 1, wherein the dielectric layer separates the first silicon wafer from the second silicon wafer.

10. The pressure sensor assembly of claim 1, wherein the dielectric layer covers the interior of the chamber.

11. A pressure sensor assembly comprising:

a first silicon wafer having a top surface and a bottom surface and a mid-plane defined half-way between the top surface and the bottom surface wherein the bottom surface includes a cavity that extends up towards the top surface past the mid-plane to a cavity bottom;

a diaphragm formed between the cavity bottom and the top surface;

a second silicon wafer coupled to the bottom surface of the first silicon wafer, the second silicon wafer covering the cavity to form a chamber;

a plurality of channels that extend through the second silicon wafer and into the chamber;

a third silicon wafer coupled to the top surface of the first silicon wafer, the third silicon wafer including a second cavity, the second cavity sized and positioned to cover the diaphragm and wherein a bottom of the second cavity forms a mechanical stop for the diaphragm;

and wherein the chamber is electrically isolated from the first silicon wafer by a dielectric layer.

12. The pressure sensor assembly of claim 11, wherein a depth of the second cavity is less than or equal 0.9 μ

m.

13. The pressure sensor assembly of claim 11, wherein the cavity bottom extends at least 80% of the way towards the top surface of the first silicon wafer.

14. The pressure sensor assembly of claim 11, wherein the dielectric layer is made of silicon dioxide or silicon nitride.

15. The pressure sensor assembly of claim 11, further comprising an electrical contact located on the top of the diaphragm and a second electrical contact located above the electrical contact on the bottom of the second cavity.

16. The pressure sensor assembly of claim 11, further comprising a substrate coupled to a bottom side of the second silicon wafer, the substrate including a substrate channel that runs from a top of the substrate to a bottom of the substrate and wherein a substrate channel opening at the top of the substrate covers a plurality of channel openings of the channels in the second silicon wafer.

17. A pressure sensor assembly comprising:

a sensor with a diaphragm, the sensor having a top and a bottom;

a cover coupled to the top of the sensor and forming a gap above the diaphragm designed to limit the full scale motion of the diaphragm;

a support coupled to the bottom of the sensor, wherein the support and the sensor form a chamber adjacent the diaphragm and wherein the support includes a plurality of channels that pass from a bottom of the support through the support up into the chamber; and

a dielectric layer electrically isolating the chamber and the channels from the sensor.

18. The pressure sensor assembly of claim 17, wherein the gap is less than or equal 0.9 μ

m.

19. The pressure sensor assembly of claim 17, further comprising an electrical contact located on a top of the diaphragm and a second electrical contact located on a bottom of the cover above the gap.

20. The pressure sensor assembly of claim 17, wherein the dielectric layer separates the sensor from the support.