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Method for forming barrier layer for dielectric layers in semiconductor devices

  • US 9,508,548 B2
  • Filed: 03/31/2014
  • Issued: 11/29/2016
  • Est. Priority Date: 03/31/2014
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, the method comprising:

  • forming an interfacial layer;

    forming a dielectric layer over the interfacial layer;

    forming a conductive layer over the dielectric layer;

    treating, after the forming the conductive layer, the conductive layer to increase an oxygen-blocking ability of the conductive layer, the treated conductive layer comprising a metal nitride containing a higher nitrogen concentration at a top surface located farthest from the dielectric layer than at a location away from the top surface;

    forming a silicon cap over the treated conductive layer;

    treating the silicon cap with post-capping anneal (PCA) processes;

    forming a gate electrode over the silicon cap; and

    forming contacts over the gate electrode.

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