Method for forming barrier layer for dielectric layers in semiconductor devices
First Claim
1. A method of forming a semiconductor device, the method comprising:
- forming an interfacial layer;
forming a dielectric layer over the interfacial layer;
forming a conductive layer over the dielectric layer;
treating, after the forming the conductive layer, the conductive layer to increase an oxygen-blocking ability of the conductive layer, the treated conductive layer comprising a metal nitride containing a higher nitrogen concentration at a top surface located farthest from the dielectric layer than at a location away from the top surface;
forming a silicon cap over the treated conductive layer;
treating the silicon cap with post-capping anneal (PCA) processes;
forming a gate electrode over the silicon cap; and
forming contacts over the gate electrode.
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Abstract
A semiconductor device having a high-k gate dielectric, and a method of manufacture, is provided. A gate dielectric layer is formed over a substrate. An interfacial layer may be interposed between the gate dielectric layer and the substrate. A barrier layer, such as a TiN layer, having a higher concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer is formed. The barrier layer may be formed by depositing, for example, a TiN layer and performing a nitridation process on the TiN layer to increase the concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer. A gate electrode is formed over the barrier layer.
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Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming an interfacial layer; forming a dielectric layer over the interfacial layer; forming a conductive layer over the dielectric layer; treating, after the forming the conductive layer, the conductive layer to increase an oxygen-blocking ability of the conductive layer, the treated conductive layer comprising a metal nitride containing a higher nitrogen concentration at a top surface located farthest from the dielectric layer than at a location away from the top surface; forming a silicon cap over the treated conductive layer; treating the silicon cap with post-capping anneal (PCA) processes; forming a gate electrode over the silicon cap; and forming contacts over the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor device, the method comprising:
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providing a substrate; forming a gate dielectric layer over the substrate; forming a barrier layer over the gate dielectric layer; increasing a first nitrogen concentration in a top surface of the barrier layer to be greater than a second nitrogen concentration in the barrier layer at a location away from the top surface, the top surface being farthest from the gate dielectric layer; forming a silicon layer over a surface of the barrier layer; annealing the silicon layer; forming a gate electrode over the silicon layer; forming an inter-layer dielectric over the gate electrode; patterning the inter-layer dielectric to expose a portion of the gate electrode; and forming a contact over the gate electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a semiconductor device, the method comprising:
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providing a substrate; forming a gate dielectric layer over the substrate; forming a conductive layer over the gate dielectric layer; performing a nitridation process on the conductive layer, wherein after performing the nitridation process, the conductive layer comprises a first TixNy layer along a top surface of the conductive layer, a ratio of y;
x being from about 1.0 to about 1.2 at the first TixNy layer, and the conductive layer comprising a second TixNy layer at a location away from the top surface of the conductive layer, a ratio of y;
x of about 0.85 to about 0.98 at the second Tix Ny layer;forming a silicon layer over the conductive layer; treating the silicon layer with post-capping anneal (PCA) processes; forming a gate electrode over the conductive layer; forming an inter-layer dielectric over the gate electrode, the inter-layer dielectric having an opening above a portion of the gate electrode; and forming a contact in the opening above the portion of the gate electrode. - View Dependent Claims (19, 20)
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Specification