Protrusion bump pads for bond-on-trace processing

• US 9,508,637 B2
• Filed: 08/11/2014
• Issued: 11/29/2016
• Est. Priority Date: 01/06/2014
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Chen-Shien, Chen, Yu-Feng, Lin, Yu-Wei, Kuo, Tin-Hao, Liang, Yu-Min, Lin, Chun-Hung
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US14/456,812
• Publication Number:
  US 20150194379A1
• Time in Patent Office: 841 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/481 Insulating layers on insulating parts, with or without metallisation
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/13016 in side view
• CPC Class Codes: H01L 2224/13082 Two-layer arrangements
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/16 of an individual bump connector

Abstract

An embodiment apparatus includes a dielectric layer in a die, a conductive trace in the dielectric layer, and a protrusion bump pad on the conductive trace. The protrusion bump pad at least partially extends over the dielectric layer, and the protrusion bump pad includes a lengthwise axis and a widthwise axis. A ratio of a first dimension of the lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.

Claims

1. An apparatus, comprising:

a dielectric layer;

a conductive trace in the dielectric layer, wherein the conductive trace comprises;

a conductive line portion having a substantially uniform width in a top-down view of the apparatus; and

a conductive trace pad portion connected to the conductive line portion, wherein the conductive trace pad portion is wider than the conductive line portion in the top-down view of the apparatus; and

a protrusion bump pad disposed on the conductive trace pad portion, wherein a surface of the protrusion bump pad opposite the conductive trace is substantially level, wherein the protrusion bump pad at least partially extends over the dielectric layer, wherein the protrusion bump pad comprises a first lengthwise axis and a widthwise axis, and wherein a ratio of a first dimension of the first lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.

2. The apparatus of claim 1, wherein the first dimension is substantially equal to the second dimension.

3. The apparatus of claim 1, wherein the protrusion bump pad is substantially circular, substantially square, hexagonal, or octagonal.

4. The apparatus of claim 1, wherein the conductive trace pad portion is circular, ovular, rectangular, hexagonal, or octagonal.

5. The apparatus of claim 1 further comprising a die bonded to the dielectric layer, wherein the die is disposed on an opposing side of the protrusion bump pad as the conductive trace, and wherein the die comprises a conductive bump, and wherein the conductive bump contacts the protrusion bump pad.

6. The apparatus of claim 5, wherein the conductive bump further contacts a sidewall of the protrusion bump pad.

7. The apparatus of claim 5, wherein a second lengthwise axis of the conductive bump is substantially parallel with the first lengthwise axis of the protrusion bump pad.

8. The apparatus of claim 5, wherein a second lengthwise axis of the conductive bump intersects the first lengthwise axis of the protrusion bump pad.

9. The apparatus of claim 1, wherein the dielectric layer is an outermost dielectric layer of a package substrate.

16. The apparatus of claim 1, wherein a first width of the conductive trace pad portion is substantially equal to or greater than the second dimension of the widthwise axis of the protrusion bump pad.

10. An apparatus comprising:

an outermost dielectric layer of a first apparatus;

a conductive trace in the outermost dielectric layer, wherein an exposed surface of the conductive trace is recessed from a top surface of the outermost dielectric layer; and

a protrusion bump pad forming an interface with the conductive trace, wherein the protrusion bump pad at least partially extends over the top surface of the outermost dielectric layer, and wherein the interface is higher than the exposed surface of the conductive trace.

11. The apparatus of claim 10, wherein the protrusion bump pad comprises a lengthwise axis and a widthwise axis, and wherein a ratio of a first dimension of the lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.

12. The apparatus of claim 10 further comprising a die bonded to the first apparatus, wherein the die comprises a conductive bump bonded to an opposing side of the protrusion bump pad as the conductive trace.

13. The apparatus of claim 12, wherein axes of the conductive bump and the protrusion bump pad are substantially parallel.

14. The apparatus of claim 12, wherein axes of the conductive bump and the protrusion bump pad intersect.

15. The apparatus of claim 12, wherein the conductive bump contacts a sidewall of the protrusion bump pad.

17. An apparatus, comprising:

a dielectric layer;

a conductive trace in the dielectric layer, wherein the conductive trace comprises;

a first portion having a top surface lower than a top surface of the dielectric layer; and

a second portion having a top surface substantially level with the top surface of the dielectric layer; and

a bump pad over and contacting the second portion of the conductive trace, wherein the bump pad comprises a first axis and a second axis substantially perpendicular to the first axis, wherein the first axis runs in a same direction as a lengthwise dimension of the conductive trace, and wherein a ratio of a first dimension of the first axis to a second dimension of the second axis is about 0.8 to about 1.2.

18. The apparatus of claim 17 further comprising a die comprising a conductive bump, wherein the conductive bump contacts and extends along sidewalls of the bump pad.

19. The apparatus of claim 18, wherein a lengthwise axis of the conductive bump is substantially parallel with the first axis or the second axis of the bump pad.

20. The apparatus of claim 18, wherein a lengthwise axis of the conductive bump is not substantially parallel with the first axis or the second axis of the bump pad.