Manufacturing method of display device
First Claim
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1. A manufacturing method of a display device comprising the steps of:
- (a) preparing a substrate having an electrode of a thin film transistor;
(b) forming a first interlayer film on the electrode;
(c) forming a first contact hole on the first interlayer film by removing a part of the first interlayer film;
(j) forming a first electrode on the first interlayer film by forming a first conductive film and patterning the first conductive film;
(d) forming a second interlayer film on the first interlayer film and in the first contact hole and on the first electrode, the second interlayer film having a first film and a second film provided above the first film, the second film having an etching rate faster than an etching rate of the first film;
(e) forming a second contact hole on the second interlayer film in the first contact hole;
(f) removing at least a part of the second film on the second contact hole and on the first electrode;
(g) forming a second conductive film on the first layer of the second interlayer film and in the second contact hole; and
(h) forming a second electrode by patterning the second conductive film on the second contact hole, whereinthe step (a) includes preparing the substrate having the electrode of the thin film transistor in a pixel forming region and a wiring in a peripheral region outside of the pixel forming region,the step (b) includes forming the first interlayer film on the electrode in the pixel forming region and on the peripheral region,the step (c) includes removing at least a part of the first interlayer film in a first region of the pixel forming region and a part of the wiring forming region,the step (d) includes forming the second interlayer film in the first region, andthe step (f) includes removing at least a part of the second film on the second interlayer film in the first region.
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Abstract
Since a film, which is the upper layer of an interlayer insulating film and has a fast etching rate, does not have dense film quality, moisture is entered from the end portion of a substrate, and it is likely that display unevenness and the like occur. A manufacturing method of a display device includes the steps of: forming a first contact hole on the first interlayer film; forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a lower layer film and an upper layer film having an etching rate faster than an etching rate of the lower layer film; forming a second contact hole on the second interlayer film; and removing at least a part of the upper layer film.
4 Citations
19 Claims
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1. A manufacturing method of a display device comprising the steps of:
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(a) preparing a substrate having an electrode of a thin film transistor; (b) forming a first interlayer film on the electrode; (c) forming a first contact hole on the first interlayer film by removing a part of the first interlayer film; (j) forming a first electrode on the first interlayer film by forming a first conductive film and patterning the first conductive film; (d) forming a second interlayer film on the first interlayer film and in the first contact hole and on the first electrode, the second interlayer film having a first film and a second film provided above the first film, the second film having an etching rate faster than an etching rate of the first film; (e) forming a second contact hole on the second interlayer film in the first contact hole; (f) removing at least a part of the second film on the second contact hole and on the first electrode; (g) forming a second conductive film on the first layer of the second interlayer film and in the second contact hole; and (h) forming a second electrode by patterning the second conductive film on the second contact hole, wherein the step (a) includes preparing the substrate having the electrode of the thin film transistor in a pixel forming region and a wiring in a peripheral region outside of the pixel forming region, the step (b) includes forming the first interlayer film on the electrode in the pixel forming region and on the peripheral region, the step (c) includes removing at least a part of the first interlayer film in a first region of the pixel forming region and a part of the wiring forming region, the step (d) includes forming the second interlayer film in the first region, and the step (f) includes removing at least a part of the second film on the second interlayer film in the first region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification
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Current AssigneeJapan Display Incorporated
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Original AssigneeJapan Display Incorporated
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InventorsKanda, Noriyoshi
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Primary Examiner(s)Toledo, Fernando L
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Assistant Examiner(s)Newton, Valerie N
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Application NumberUS14/606,199Publication NumberTime in Patent Office672 DaysField of SearchUS Class Current1/1CPC Class CodesG02F 1/134363 for applying an electric fi...G02F 1/134372 for fringe field switching ...G02F 1/136227 Through-hole connection of ...G02F 1/1368 in which the switching elem...G02F 1/13685 Top gatesG02F 2201/50 Protective arrangementsH01L 21/76804 by forming tapered via holesH01L 27/124 with a particular compositi...H01L 27/1248 with a particular compositi...H01L 27/1288 employing particular maskin...H01L 29/66757 Lateral single gate single ...
