Gallium nitride power devices using island topography

• US 9,508,797 B2
• Filed: 04/08/2015
• Issued: 11/29/2016
• Est. Priority Date: 08/04/2009
• Status: Active Grant

• Current Assignee: GaN Systems Inc. (Infineon Technologies AG)
• Original Assignee: GaN Systems Inc. (Infineon Technologies AG)
• Inventors: Roberts, John, Mizan, Ahmad, Patterson, Girvan, Klowak, Greg
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): SALERNO, SARAH KATE
• Application Number:
  US14/681,676
• Publication Number:
  US 20150318353A1
• Time in Patent Office: 601 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/4824 Pads with extended contours, e.g. grid structure, branch structure, finger structure
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/4175 for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/41775 characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
• CPC Class Codes: H01L 29/42316 for field-effect transistors
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/475 on AIII-BV compounds
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes.

Claims

1. A nitride semiconductor device comprising:

a substrate;

a nitride semiconductor layer comprising a nitride semiconductor hetero-layer formed on a main surface of the substrate;

a plurality of source island electrodes and a plurality of drain island electrodes of a multi-island transistor formed on the nitride semiconductor layer, the source island electrodes and drain island electrodes being spaced apart from each other and arranged as an array with alternating source island electrodes and drain island electrodes along at least two different axial directions to produce two-dimensional active regions in a device area of the nitride semiconductor layer;

a plurality of gate strip electrodes formed on the nitride semiconductor layer in active regions between adjacent source island electrodes and drain island electrodes, an overlying low resistance gate interconnect running between the source island electrodes and drain island electrodes, the plurality of gate electrodes being interconnected to the low resistance gate interconnect by gate interconnections at interstices defined by adjacent vertices of the source island electrodes and the drain island electrodes;

each of the plurality of source island electrodes having a respective individual source contact area (pad) comprising a bump, ball or post connection formed thereon;

each of the plurality of drain island electrodes having a respective individual drain contact area (pad) comprising a bump, ball or post connection formed thereon;

the low resistance gate interconnect being connected to a plurality of gate pads; and

wherein, in defective active regions, individual gate strip electrodes are selectively disconnected from the gate interconnect by absence or removal of respective gate interconnections thereto.

2. The nitride semiconductor device of claim 1, wherein in defective active regions, individual drain island electrodes are isolated by absence or removal of the bump, ball or post connection thereon.

3. The nitride semiconductor device of claim 1, wherein each of the plurality of source island electrodes comprises a plurality of castellated peninsulas extending from at least one side, which are interleaved with a plurality of castellated peninsulas extending from a side of an adjacent one of the plurality of drain island electrodes.

4. The nitride semiconductor device of claim 1, wherein the first and second island electrodes:

a) have a predominantly rectangular shape;

or

b) have a predominantly triangular shape;

or

c) have a polygon shape that can be arranged as said array of alternating source and drain island electrodes to optimize active area usage.

5. The nitride semiconductor device of claim 1, wherein the nitride semiconductor layer comprises hetero-layer of a layer of undoped gallium nitride (GaN) beneath a layer of undoped aluminum gallium nitride (AlGaN).

6. The nitride semiconductor device of claim 5 further comprising a layer of p-type GaN material or p-type AlGaN material under the gate electrode to create an enhancement-mode device.

7. A nitride semiconductor device comprising:

a substrate;

a nitride semiconductor layer comprising a nitride semiconductor hetero-layer formed on a main surface of the substrate;

a metallization layer formed on the nitride semiconductor layer defining a plurality of first island electrodes and a plurality of second island electrodes spaced apart from each other and arranged as an array with alternating first island electrodes and second island electrodes along at least two orthogonal directions to produce two-dimensional active regions in a device area of the nitride semiconductor layer, with

at least one side of each first island electrode opposite a side of an adjacent second island electrode;

at least one side of each second island electrode opposite a side of an adjacent first island electrode;

an overlying interconnect structure comprising one or more metallization layers and intervening insulating layers;

the one or more metallization layers of the overlying interconnect structure defining a plurality of first common electrodes and a plurality of second common electrodes, the first common electrodes and the second common electrodes being arranged as a second array with alternating first common electrodes and second common electrodes, the second array of first and second common electrodes overlying the array of the first and second island electrodes;

each first common electrode being interconnected to a set of said first island electrodes by said one or more metallization layers and conductive vias; and

each second common electrode being interconnected to a set of said second island electrodes by said one or more metallization layers and conductive vias;

each of the first common electrodes providing an external first connection formed thereon comprising a ball, bump or post connection, and

each of the second common electrodes comprises an external first connection formed thereon comprising a ball, bump or post connection;

the first island electrodes and second island electrodes serving, respectively, as source island electrodes and drain island electrodes of a multi-island transistor; and

a plurality of gate strip electrodes of the multi-island transistor formed on the nitride semiconductor layer in active regions between adjacent first island electrodes and second island electrodes;

a low resistance gate interconnect running between the source island electrodes and drain island electrodes overlying the gate strip electrodes, the plurality of gate strip electrodes being interconnected to the low resistance gate interconnect by gate interconnections at interstices defined by adjacent vertices of the first island electrodes and second island electrodes;

one or more gate common electrodes comprising an external gate connection formed thereon comprising a ball, bump or post connection; and

the gate strap connecting the interconnected gate strip electrodes to the one or more gate common electrodes; and

wherein, in defective active regions, individual gate electrodes are selectively disconnected from the gate interconnect by absence or removal of respective gate interconnections thereto.

8. The nitride semiconductor device of claim 7,

wherein in said defective active regions, individual drain common electrodes are isolated by absence or removal of the bump, ball or post connection thereon.

9. The nitride semiconductor device of claim 7, wherein the first and second island electrodes:

a) have a predominantly rectangular shape;

or

b) have a predominantly triangular shape;

or

c) have a polygon shape that can be arranged as said array of alternating source and drain island electrodes to optimize active area usage.

10. The nitride semiconductor device of claim 7 wherein the nitride semiconductor layer comprises hetero-layer of a layer of undoped gallium nitride (GaN) beneath a layer of undoped aluminum gallium nitride (AlGaN).

11. The nitride semiconductor device of claim 10 further comprising a layer of p-type GaN material or p-type AlGaN material under the gate electrode to create an enhancement-mode device.

12. A nitride semiconductor device comprising:

a substrate;

a nitride semiconductor layer comprising a nitride semiconductor hetero-layer formed on a main surface of the substrate;

a plurality of source, drain and gate electrodes of a multi-island transistor formed on the nitride semiconductor layer, the plurality of source, drain and gate electrodes comprising concentric electrode islands of decreasing size and arranged as repeated square shaped concentric tracks of ohmic and Schottky contacts, every two ohmic contacts having a Schottky contact in between, a plurality of source concentric island electrodes and a plurality of drain concentric island electrodes being formed from said ohmic concentric tracks, the gate electrodes in between the source and drain concentric electrodes being formed from said Schottky concentric tracks,

the source and drain concentric electrodes thereby being alternately arranged such that each source island electrode is adjacent to a drain island electrode with a gate electrode in between;

an overlying dielectric isolation layer with an array of a plurality of overlying square shaped source metal pads and drain metal pads formed thereon, the source and drain metal pads being arranged alternately with each source metal pad adjacent a drain metal pad, the corners of each adjacent four metal pads being placed over a set of square shaped concentric tracks of source and drain concentric island electrodes;

source concentric island electrodes being connected to a respective overlying source metal pad by conductive vias;

drain concentric island electrodes being connected to a respective overlying drain metal pad by conductive vias; and

a gate connection point located at the center of each set of concentric tracks and in spaces defined between adjacent corners of the source and drain metal pads.

13. The device of claim 12 wherein the Schottky gate electrodes are connected to an overlying low resistance interconnect metal strap by gate interconnections to said gate connection points.

14. The device of claim 12 wherein, in defective regions, Schottky gate electrodes are selectively disconnected from the gate strap by absence or removal of said gate interconnections.