Method for making light-emitting device
First Claim
1. A method for making a light-emitting device, comprising:
- providing a growth substrate;
forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer;
forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth;
forming a protecting layer on the Distributed Bragg reflector by epitaxial growth;
forming a first contact layer on the Distributed Bragg reflector by epitaxial growth;
forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, wherein the second light-emitting semiconductor stack comprises a second active layer;
forming a second contact layer by epitaxial growth after the step of forming the second light-emitting semiconductor stack andwherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength;
wherein the method further comprises forming a third contact layer on the growth substrate by epitaxial growth;
wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer between the growth substrate and the first active layer and a second semiconductor layer between the first active layer and the Distributed Bragg reflector, wherein the second light-emitting semiconductor stack further comprises a third semiconductor layer between the first contact layer and the second active layer and a fourth semiconductor layer on the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.
8 Citations
20 Claims
-
1. A method for making a light-emitting device, comprising:
-
providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a protecting layer on the Distributed Bragg reflector by epitaxial growth; forming a first contact layer on the Distributed Bragg reflector by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, wherein the second light-emitting semiconductor stack comprises a second active layer; forming a second contact layer by epitaxial growth after the step of forming the second light-emitting semiconductor stack and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength; wherein the method further comprises forming a third contact layer on the growth substrate by epitaxial growth; wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer between the growth substrate and the first active layer and a second semiconductor layer between the first active layer and the Distributed Bragg reflector, wherein the second light-emitting semiconductor stack further comprises a third semiconductor layer between the first contact layer and the second active layer and a fourth semiconductor layer on the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method for making a light-emitting device, comprising:
-
providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a protecting layer on the Distributed Bragg reflector by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, wherein the second light-emitting semiconductor stack comprises a second active layer; wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer between the growth substrate and the first active layer and a second semiconductor layer between the first active layer and the Distributed Bragg reflector, wherein the second light-emitting semiconductor stack further comprises a third semiconductor layer between the first light-emitting semiconductor stack and the second active layer and a fourth semiconductor layer on the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification