Light-emitting diode and method for manufacturing same

• US 9,508,909 B2
• Filed: 12/28/2015
• Issued: 11/29/2016
• Est. Priority Date: 12/23/2011
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Im, Tae Hyuk, Kim, Chang Yeon, Yoon, Yeo Jin, Lee, Joon Hee, Nam, Ki Bum, Kim, Da Hye, Im, Chang Ik, Kim, Young Wug
• Primary Examiner(s): ULLAH, ELIAS
• Application Number:
  US14/980,937
• Publication Number:
  US 20160111613A1
• Time in Patent Office: 337 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.

Claims

1. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing a portion of the semiconductor stack;

a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack;

an electrode extension connected to the first electrode pad, the electrode extension overlapping the groove; and

an upper insulation layer disposed between the first electrode pad and the semiconductor stack,

wherein the electrode extension comprises an Ni layer contacting the n-type compound semiconductor layer, and at least two Au layers disposed on the Ni layer.

2. The light-emitting diode of claim 1, further comprising:

a deformation relieving layer disposed between the at least two Au layers,

wherein the deformation relieving layer comprises a Cr layer.

3. The light-emitting diode of claim 2, wherein the electrode extension comprises Ni/Al/Ni/Au/Cr/Au layers directly contacting each other in said order.

4. The light-emitting diode of claim 1, wherein each of the at least two Au layers has a thickness in a range of 1 to 5 μ

m.

5. The light-emitting diode of claim 1, wherein:

the n-type compound semiconductor layer comprises an n-type contact layer and a first recovery layer disposed between the n-type contact layer and the active layer, the first recovery layer adjoining the n-type contact layer;

the first recovery layer comprises an undoped layer or a lightly doped layer having a lower doping concentration than that of the n-type contact layer, and

the n-type contact layer has a thickness in a range of 4.5 to 10 μ

m.

6. The light-emitting diode of claim 5, wherein the first recovery layer has a thickness in a range of 100 to 200 nm.

7. The light-emitting diode of claim 5, wherein the semiconductor stack further comprises an electron injection layer disposed between the first recovery layer and the active layer.

8. The light-emitting diode of claim 7, wherein the semiconductor stack further comprises a super-lattice layer disposed between the electron injection layer and the active layer.

9. The light-emitting diode of claim 7, wherein the semiconductor stack further comprises:

a second recovery layer disposed on the first recovery layer; and

an electron replenishment layer disposed between the first recovery layer and the second recovery layer.

10. The light-emitting diode of claim 1, further comprising an intermediate insulation layer contacting the portion of the semiconductor stack exposed through the groove of the reflective metal layer.

11. The light-emitting diode of claim 10, further comprising a barrier metal layer disposed between the reflective metal layer and the support substrate,

wherein the barrier metal layer covers the reflective metal layer.

12. The light-emitting diode of claim 11, wherein the reflective metal layer comprises plates.

13. The light-emitting diode of claim 1, wherein:

the semiconductor stack comprises a roughened upper surface;

the upper insulation layer covers the upper surface of the semiconductor stack; and

the upper insulation layer comprises a convex-concave surface disposed on the roughened upper surface of the semiconductor stack.

14. The light-emitting diode of claim 13, wherein:

the upper surface of the semiconductor stack structure further comprises a flat surface; and

the first electrode pad and the electrode extension are disposed on the flat upper surface.

15. The light-emitting diode of claim 14, wherein the electrode extension contacts the flat surface of the semiconductor stack.

16. The light-emitting diode of claim 1, wherein the electrode extension overlaps the groove along a line perpendicular to the support substrate.

17. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising grooves respectively exposing portions of the semiconductor stack;

first electrode pads contacting the n-type compound semiconductor layer of the semiconductor stack;

electrode extensions respectively connected to each of the first electrode pads, each of the electrode extensions respectively overlapping each of the grooves; and

an upper insulation layer disposed between the first electrode pad and the semiconductor stack,

wherein;

the electrode extension comprises an Ni layer contacting the n-type compound semiconductor layer, and at least two Au layers disposed on the Ni layer; and

the reflective metal layer comprises plates respectively separated by one of the grooves.