Detector remodulator
First Claim
Patent Images
1. A detector remodulator comprising:
- a silicon on insulator (SOI) chip;
a detector coupled to a first input waveguide;
a SiGe or homogeneous Si modulator, on the SOI chip, coupled to a second input waveguide and an output waveguide; and
an electrical circuit connecting the detector to the modulator;
wherein the modulator includes a waveguide including a modulation region at which a semiconductor junction is set across the waveguide of the modulator, the junction comprising a first doped region and a second doped region;
wherein;
the electrical circuit is connected to a first electrical pad on a first side of the modulation region, the first electrical pad forming a contact directly to the first doped region,the electrical circuit is connected to a second electrical pad on a second side of the modulation region, the second electrical pad forming a contact directly to the second doped region, andthe electrical circuit comprises a signal path from the detector to the modulator, the signal path having a portion in an integrated circuit.
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Abstract
A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.
60 Citations
27 Claims
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1. A detector remodulator comprising:
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a silicon on insulator (SOI) chip; a detector coupled to a first input waveguide; a SiGe or homogeneous Si modulator, on the SOI chip, coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the modulator includes a waveguide including a modulation region at which a semiconductor junction is set across the waveguide of the modulator, the junction comprising a first doped region and a second doped region; wherein; the electrical circuit is connected to a first electrical pad on a first side of the modulation region, the first electrical pad forming a contact directly to the first doped region, the electrical circuit is connected to a second electrical pad on a second side of the modulation region, the second electrical pad forming a contact directly to the second doped region, and the electrical circuit comprises a signal path from the detector to the modulator, the signal path having a portion in an integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification