Atomic layer deposition of antimony oxide films
First Claim
1. A method of depositing an antimony oxide thin film, comprising alternately and sequentially contacting a substrate in a reaction chamber with an antimony precursor and an oxygen source, wherein the antimony precursor has the formula Sb(NR2)xA3-x, wherein x is from 1 to 3, wherein each R is independently selected to be a linear, branched or cyclic, saturated or unsaturated, C1-C12 alkyl or alkenyl group or hydrogen if the other R is not hydrogen, and wherein A is a ligand comprising alkylamine, halide, amine, silyl or alkyl.
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Abstract
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
18 Citations
20 Claims
- 1. A method of depositing an antimony oxide thin film, comprising alternately and sequentially contacting a substrate in a reaction chamber with an antimony precursor and an oxygen source, wherein the antimony precursor has the formula Sb(NR2)xA3-x, wherein x is from 1 to 3, wherein each R is independently selected to be a linear, branched or cyclic, saturated or unsaturated, C1-C12 alkyl or alkenyl group or hydrogen if the other R is not hydrogen, and wherein A is a ligand comprising alkylamine, halide, amine, silyl or alkyl.
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11. A method of depositing an antimony oxide layer on a substrate by atomic layer deposition, comprising:
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contacting a surface of the substrate with an antimony precursor having the formula Sb(NR2)xA3-x, wherein x is from 1 to 3, and each R is independently selected to be linear, branched or cyclic, saturated or unsaturated, C1-C12 alkyl or alkenyl group or hydrogen if the other R is not hydrogen, and wherein A is a ligand comprising alkylamine, halide, amine, silyl or alkyl, such that the antimony precursor adsorbs on the substrate surface; and exposing the substrate to an oxygen source, wherein the oxygen source reacts with the antimony precursor on the surface of the substrate to form the antimony oxide. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification