3D nonvolatile memory device having common word line
First Claim
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1. A three-dimensional (3D) nonvolatile memory device comprising:
- a first cell region;
a second cell region spaced apart from the first cell region; and
a stack of common word lines extending from the first cell region to the second cell region and physically connected to the first cell region and the second cell region,wherein the stack of common word lines includes N number of common word lines, where N is an integer,wherein the stack of common word lines includes a first slim region,wherein the first slim region has a stepped structure and is located between the first cell region and the second cell region.
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Abstract
A 3D nonvolatile memory device including memory cells vertically stacked is disclosed. Word lines are integrally formed to be elongated over adjacent cell regions spaced apart from each other, and portions of the word lines between the cell regions are partially etched in a stepped shape to form word line contact regions.
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Citations
12 Claims
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1. A three-dimensional (3D) nonvolatile memory device comprising:
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a first cell region; a second cell region spaced apart from the first cell region; and a stack of common word lines extending from the first cell region to the second cell region and physically connected to the first cell region and the second cell region, wherein the stack of common word lines includes N number of common word lines, where N is an integer, wherein the stack of common word lines includes a first slim region, wherein the first slim region has a stepped structure and is located between the first cell region and the second cell region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification