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Nitride semiconductor layer, nitride semiconductor device, and method for manufacturing nitride semiconductor layer

  • US 9,515,146 B2
  • Filed: 05/01/2015
  • Issued: 12/06/2016
  • Est. Priority Date: 06/25/2014
  • Status: Active Grant
First Claim
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1. A nitride semiconductor layer spreading along a first surface, the nitride semiconductor layer comprising:

  • a first region, wherein a length of the first region in a first direction parallel to the first surface is longer than a length of the first region in a second direction parallel to the first surface, wherein the second direction is perpendicular to the first direction; and

    a second region arranged with the first region in the second direction, wherein a length of the second region in the first direction is longer than a length of the second region in the second direction,wherein the nitride semiconductor has a c-axis that is tilted with respect to the second direction for the first region and the second region,wherein the c-axis intersects a third direction, wherein the third direction is perpendicular to the first direction and the second direction, andwherein the c-axis is tilted with a plane including the second direction and the third direction.

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