Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers

• US 9,515,633 B1
• Filed: 01/11/2016
• Issued: 12/06/2016
• Est. Priority Date: 01/11/2016
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Long, Maolin, Paterson, Alex
• Primary Examiner(s): Crawford, Jason M
• Application Number:
  US14/992,558
• Time in Patent Office: 330 Days
• Field of Search: 315 56- 58, 315/111.21, 315/111.71, 313/231.31
• US Class Current: 1/1
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32119 Windows
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H03H 7/38 Impedance-matching networks
• CPC Class Codes: H03H 7/48 Networks for connecting several sources or loads, working on the same frequency or frequency band, to a common load or source phase shifters providing two or more output signals H03H7/21

Abstract

A transformer coupled capacitive tuning (TCCT) circuit for an inductively coupled plasma (ICP) chamber includes a matching circuit including a first switched capacitor circuit and a first inductor. The first switched capacitor circuit includes a first terminal, a second terminal, a first capacitor connected to at least one of the first terminal and the second terminal, a second capacitor connected to at least one of the first terminal and the second terminal, and a first switch in communication with at least one of the first capacitor and the second capacitor to vary a capacitance value between the first terminal and the second terminal. A power splitter communicates with the matching circuit and an inductive coil of the ICP chamber.

Claims

1. A transformer coupled capacitive tuning (TCCT) circuit for an inductively coupled plasma (ICP) chamber, comprising:

a matching circuit including;

a first switched capacitor circuit and a first inductor, wherein the first switched capacitor circuit includes;

a first terminal connected to an RF input;

a second terminal;

a first capacitor connected to at least one of the first terminal and the second terminal;

a second capacitor connected to at least one of the first terminal and the second terminal; and

a first switch in communication with at least one of the first capacitor and the second capacitor to vary a capacitance value between the first terminal and the second terminal; and

a second switched capacitor circuit including;

a third terminal connected to the second terminal of the first switched capacitor circuit;

a fourth terminal connected to the first inductor;

a third capacitor connected to at least one of the third terminal and the fourth terminal;

a fourth capacitor connected to at least one of the third terminal and the fourth terminal; and

a second switch in communication with at least one of the third capacitor and the fourth capacitor to vary a capacitance value between the third terminal and the fourth terminal; and

the TCCT circuit further comprising;

a fifth capacitor, wherein a first terminal of the fifth capacitor is connected to the second terminal of the first switched capacitor circuit and to the third terminal of the second switched capacitor circuit, and wherein a second terminal of the fifth capacitor is connected to ground; and

a power splitter in communication with the matching circuit and an inductive coil of the ICP chamber.

2. The TCCT circuit of claim 1, wherein the first capacitor and the second capacitor include motor-controlled vacuum capacitors.

3. The TCCT circuit of claim 1, wherein the third capacitor and the fourth capacitor include motor-controlled vacuum capacitors.

4. The TCCT circuit of claim 1, wherein:

the first capacitor is connected to the first terminal of the first switched capacitor circuit,

the second capacitor is connected to the first terminal of the first switched capacitor circuit, and

the first switch is connected between the first capacitor and the second terminal of the first switched capacitor circuit; and

the first switched capacitor circuit further includes a third switch connected between the second capacitor and the second terminal of the first switched capacitor circuit.

5. The TCCT circuit of claim 1, wherein:

the first capacitor is connected to the first terminal of the first switched capacitor circuit,

the second capacitor is connected to the first terminal and the second terminal of the first switched capacitor circuit, and

the first switch is connected between the first capacitor and the second terminal of the first switched capacitor circuit.

6. The TCCT circuit of claim 1, further comprising a controller adapted to switch the first switch between first and second states to vary the capacitance value.

7. The TCCT circuit of claim 6, wherein the controller switches the first switch at a rate between 10 Hz and 1 kHz.

8. The TCCT circuit of claim 1, wherein:

the third capacitor is connected to the fourth terminal of the second switched capacitor circuit,

the fourth capacitor is connected to the fourth terminal of the second switched capacitor circuit, and

the second switch is connected between the third capacitor and the third terminal of the second switched capacitor circuit; and

the second switched capacitor circuit further includes a third switch connected between the fourth capacitor and the third terminal of the second switched capacitor circuit.

9. The TCCT circuit of claim 1, wherein:

the third capacitor is connected to the fourth terminal of the second switched capacitor circuit,

the fourth capacitor is connected to the fourth terminal and the third terminal of the second switched capacitor circuit, and

the second switch is connected between the third capacitor and the third terminal of the second switched capacitor circuit.

10. A transformer coupled capacitive tuning (TCCT) circuit for an inductively coupled plasma (ICP) chamber, comprising:

a matching circuit including a first switched capacitor circuit and a first inductor,

wherein the first switched capacitor circuit includes;

a first terminal;

a second terminal;

a first capacitor connected to at least one of the first terminal and the second terminal;

a second capacitor connected to at least one of the first terminal and the second terminal; and

a first switch in communication with at least one of the first capacitor and the second capacitor to vary a capacitance value between the first terminal and the second terminal; and

a power splitter in communication with the matching circuit and an inductive coil of the ICP chamber, wherein the power splitter includes;

a third capacitor having a first terminal connected to an output of the matching circuit;

a fourth capacitor having a first terminal connected to a second terminal of the third capacitor and a second terminal in communication with a first coil;

a fifth capacitor having a first terminal connected to the output of the matching circuit;

a second inductor including a first terminal connected to a second terminal of the fifth capacitor;

a sixth capacitor having a first terminal connected to a second terminal of the second inductor and a second terminal connected to a second coil; and

a seventh capacitor connected to the first coil.

11. The TCCT circuit of claim 10, wherein the fourth capacitor and the sixth capacitor include switched capacitor circuits.

12. A substrate processing system comprising:

a transformer coupled capacitive tuning (TCCT) circuit for an inductively coupled plasma (ICP) chamber, comprising;

a matching circuit including a first switched capacitor circuit and a first inductor,

wherein the first switched capacitor circuit includes;

a first terminal;

a second terminal;

a first capacitor connected to at least one of the first terminal and the second terminal;

a second capacitor connected to at least one of the first terminal and the second terminal; and

a first switch in communication with at least one of the first capacitor and the second capacitor to vary a capacitance value between the first terminal and the second terminal; and

a power splitter in communication with the matching circuit and an inductive coil of the ICP chamber; and

the substrate processing system further comprising;

an RF generator to generate an RF input signal to the TCCT circuit;

an RF bias generator to bias a substrate support in the ICP chamber; and

a controller configured to;

during a first half cycle, supply a first capacitance value from the first switched capacitor circuit, and supply the RF input signal at a first amplitude and the RF bias at a second amplitude; and

during a second half cycle, supply a second capacitance value from the first switched capacitor circuit, and supply the RF input signal at a third amplitude and the RF bias at a fourth amplitude,

wherein the first capacitance value is different than the second capacitance value, and wherein the first amplitude is different than the third amplitude and the second amplitude is different than the fourth amplitude.

13. The system of claim 12, wherein the controller switches the RF input signal, the RF bias and the capacitance value at a rate between 10 Hz and 1 kHz.