Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first substrate;
a plurality of sensors over the first substrate, each of the plurality of sensors comprising a first electrode;
a thin film transistor over the first substrate;
an insulating film over the thin film transistor;
a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor;
a liquid crystal over the first electrode and the pixel electrode; and
a second substrate over the liquid crystal,wherein the plurality of sensors are arranged in two-dimensions,wherein each of the plurality of sensors outputs a capacitance change,wherein each of the first electrode and the pixel electrode comprises a transparent electrode, andwherein the first electrode is electrically connected to a first switch and a second switch.
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Abstract
A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a first substrate; a plurality of sensors over the first substrate, each of the plurality of sensors comprising a first electrode; a thin film transistor over the first substrate; an insulating film over the thin film transistor; a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor; a liquid crystal over the first electrode and the pixel electrode; and a second substrate over the liquid crystal, wherein the plurality of sensors are arranged in two-dimensions, wherein each of the plurality of sensors outputs a capacitance change, wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and wherein the first electrode is electrically connected to a first switch and a second switch. - View Dependent Claims (2, 3, 4, 5, 6, 18)
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7. A semiconductor device comprising:
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a first substrate; a sensor over the first substrate, the sensor comprising a first electrode; a thin film transistor over the first substrate; an insulating film over the thin film transistor; a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor; a liquid crystal over the first electrode and the pixel electrode; and a second substrate over the liquid crystal, wherein the sensor outputs a capacitance change, wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and wherein the first electrode is electrically connected to a first switch and a second switch. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a first substrate; a plurality of sensors over the first substrate, each of the plurality of sensors comprising a first electrode; a thin film transistor over the first substrate; an insulating film over the thin film transistor; a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor; a liquid crystal over the first electrode and the pixel electrode; and a second substrate over the liquid crystal, wherein each of the plurality of sensors outputs a capacitance change, wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and wherein the first electrode is electrically connected to a first switch and a second switch. - View Dependent Claims (14, 15, 16, 17)
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Specification