RF switch with inter-domain ESD protection
First Claim
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1. An RF switch integrated circuit with inter-domain ESD protection;
- the RF switch comprising;
an RF domain section having a plurality of RF switching elements;
a DC domain section having circuitry configured for driving the RF switching elements; and
at least one primary ESD protection element formed on a semiconductor die containing the RF domain section and the DC domain section;
wherein the at least one primary ESD protection element is internally coupled on the semiconductor die between a pin of the RF domain section and a pin of the DC domain section and provides a direct discharge path for inter-domain ESD events occuring between pins associated with the DC domain section and pins associated with the RF domain section.
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Abstract
An RF switch with inter-domain ESD protection. The RF switch comprises an RF domain section having a plurality of RF switching elements; and a DC domain section having circuitry configured for driving the RF switching elements. At least one primary ESD protection element is operably coupled between the RF domain section and DC domain section.
8 Citations
27 Claims
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1. An RF switch integrated circuit with inter-domain ESD protection;
the RF switch comprising; an RF domain section having a plurality of RF switching elements; a DC domain section having circuitry configured for driving the RF switching elements; and at least one primary ESD protection element formed on a semiconductor die containing the RF domain section and the DC domain section;
wherein the at least one primary ESD protection element is internally coupled on the semiconductor die between a pin of the RF domain section and a pin of the DC domain section and provides a direct discharge path for inter-domain ESD events occuring between pins associated with the DC domain section and pins associated with the RF domain section.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor die having an RF switch integrated circuit with inter-domain ESD protection fabricated thereon, wherein the RF switch integrated circuit comprises:
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an RF domain section having a plurality of RF switching elements; a DC domain section having circuitry configured for driving the RF switching elements; and at least one primary ESD element formed on a semiconductor die containing the RF domain section and the DC domain section;
wherein the at least one primary ESD protection element is internally coupled on the semiconductor die between a pin of the RF domain section and a pin of the DC domain section and provides a direct discharge path for inter-domain ESD events occuring between pins associated with the DC domain section and pins associated with the RF domain section. - View Dependent Claims (17)
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18. A method of fabricating an RF switch integrated circuit having inter-domain ESD protection;
- the method comprises;
providing an RF domain section having a plurality of RF switching elements on a semiconductor die; providing a DC domain section having circuitry configured for driving the RF switching elements on the semiconductor die; and forming at least one primary ESD protection element on the semiconductor die containing the RF domain section and the DC domain section;
wherein the at least one primary ESD protection element is internally coupled between a pin of the RF domain section and a pin of the DC domain and provides a direct discharge path for inter-domain ESD events occuring between pins associated with the DC domain section and pins associated with the RF domain section. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
- the method comprises;
Specification