Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device
First Claim
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1. A semiconductor substrate comprising:
- a silicon-based substrate;
a buffer layer provided on the silicon-based substrate and comprised of a nitride semiconductor containing boron; and
an operation layer formed on the buffer layer,wherein the buffer layer has a stacked body comprising of three or more layers, anda concentration of boron in the stacked body gradually decreases toward a side of the operation layer from a side of the silicon-based substrate.
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Abstract
A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided.
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Citations
20 Claims
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1. A semiconductor substrate comprising:
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a silicon-based substrate; a buffer layer provided on the silicon-based substrate and comprised of a nitride semiconductor containing boron; and an operation layer formed on the buffer layer, wherein the buffer layer has a stacked body comprising of three or more layers, and a concentration of boron in the stacked body gradually decreases toward a side of the operation layer from a side of the silicon-based substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a semiconductor device comprising:
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forming a buffer layer comprised of a nitride semiconductor on a silicon-based substrate, the buffer layer having a stacked body comprising of three or more layers; and forming an operation layer on the buffer layer, wherein the step of forming the buffer layer comprises a stage in which boron is introduced into the buffer layer such that a concentration of boron in the buffer layer gradually decreases toward a side of the operation layer from a side of the silicon-based substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification