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Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device

  • US 9,520,286 B2
  • Filed: 05/02/2014
  • Issued: 12/13/2016
  • Est. Priority Date: 05/31/2013
  • Status: Active Grant
First Claim
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1. A semiconductor substrate comprising:

  • a silicon-based substrate;

    a buffer layer provided on the silicon-based substrate and comprised of a nitride semiconductor containing boron; and

    an operation layer formed on the buffer layer,wherein the buffer layer has a stacked body comprising of three or more layers, anda concentration of boron in the stacked body gradually decreases toward a side of the operation layer from a side of the silicon-based substrate.

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