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Semiconductor device having a low divot of alignment between a substrate and an isolation thereof and method of forming the same

  • US 9,520,296 B2
  • Filed: 06/12/2014
  • Issued: 12/13/2016
  • Est. Priority Date: 06/12/2014
  • Status: Active Grant
First Claim
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1. A method of forming vertical structures, comprising:

  • providing a substrate;

    forming a first oxide layer over the substrate;

    forming a shallow trench isolation to divide the substrate into a first region and a second region;

    forming a first dummy layer over the first oxide layer and the shallow trench isolation;

    etching the first oxide layer and the first dummy layer to form a first recess in the first region and a second recess in the second region;

    forming a second dummy layer in the first recess and the second recess;

    removing the first dummy layer;

    removing the first oxide layer;

    etching a portion of the shallow trench isolation; and

    etching the substrate to make the substrate aligned with a top of the shallow trench isolation and to form a first vertical structure in the first region and a second vertical structure in the second region.

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