Power semiconductor arrangement and method of producing a power semiconductor arrangement

• US 9,520,305 B2
• Filed: 09/30/2014
• Issued: 12/13/2016
• Est. Priority Date: 09/30/2013
• Status: Expired due to Fees

• Current Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Original Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Inventors: Kulas, Hartmut
• Primary Examiner(s): Niu, Xinning
• Assistant Examiner(s): Vu, Vu A
• Application Number:
  US14/503,303
• Publication Number:
  US 20150091151A1
• Time in Patent Office: 805 Days
• Field of Search: 257/69
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4878 Mechanical treatment, e.g. deforming
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/055 the leads having a passage through the base H01L23/057 takes precedence
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H05K 7/20927 Liquid coolant without phase change

Abstract

A power semiconductor device comprising a power semiconductor module and a heat sink; and a method for its manufacture. The module has a cooling plate, with an opening delimited by a lateral first surface thereof extending circumferentially around the opening. The cooling plate is arranged in the opening and has a lateral first surface which extends circumferentially around the cooling plate. The two first surfaces are at a respective angle of less than 90° with respect to a main surface of the cooling plate facing the power semiconductor components. The two first surfaces are pressed together, extending circumferentially along the first surface of the cooling plate and extending circumferentially along the first surface of the heat sink. The inventive power semiconductor device has good heat conduction from the power semiconductor components to the heat sink through which a liquid can flow, and which is reliably leaktight over the long term.

Claims

1. A power semiconductor device comprising:

a power semiconductor module having

electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;

a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α

) of less than about 90°

with respect to said main surface of said cooling plate; and

an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;

wherein said first surface of said heat sink is at an angle (β

) of less than about 90°

with respect to said main surface of said cooling plate;

wherein said cooling plate is arranged in said opening;

wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;

wherein said heat sink has a lateral second surface which extends circumferentially around said opening;

wherein said opening is further delimited by said lateral second surface of said heat sink;

wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;

wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

2. A power semiconductor device comprising:

a power semiconductor module having

electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;

a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α

) of less than about 90°

with respect to said main surface of said cooling plate; and

an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;

wherein said first surface of said heat sink is at an angle (β

) of less than about 90°

with respect to said main surface of said cooling plate;

wherein said angle (β

) is approximately equal to said angle (α

);

wherein said cooling plate is arranged in said opening;

wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;

wherein said heat sink has a lateral second surface which extends circumferentially around said opening;

wherein said opening is further delimited by said lateral second surface of said heat sink ;

wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;

wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

3. A power semiconductor device comprising:

a power semiconductor module having

electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;

a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α

) of between about 89.5° and

about 85°

with respect to said main surface of said cooling plate; and

an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;

wherein said first surface of said heat sink is at an angle (β

) of less than about 90°

with respect to said main surface of said cooling plate;

wherein said cooling plate is arranged in said opening;

wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;

wherein said heat sink has a lateral second surface which extends circumferentially around said opening;

wherein said opening is further delimited by said lateral second surface of said heat sink;

wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;

wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

4. A power semiconductor device comprising:

a power semiconductor module having

electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;

a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α

) of between about 89.5° and

about 85°

with respect to said main surface of said cooling plate; and

an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;

wherein said first surface of said heat sink is at an angle (β

) which is approximately equal to said angle (α

);

wherein said cooling plate is arranged in said opening;

wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;

wherein said heat sink has a lateral second surface which extends circumferentially around said opening;

wherein said opening is further delimited by said lateral second surface of said heat sink;

wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;

wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

5. A method for producing a power semiconductor device, the method comprising the following steps:

a) providing a power semiconductor module having

electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;

a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α

) of less than about 90°

with respect to said main surface of said cooling plate; and

an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate;

b) providing a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening, and a lateral second surface which extends circumferentially around said opening and further delimits said opening;

c) arranging said cooling plate in said opening; and

d) press-fitting said cooling plate into said opening so that said lateral first surface of said cooling plate and said lateral first surface of said heat sink are pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;

e) forming an inner surface of a first groove which extends circumferentially around said opening with said lateral second surface of said heat sink, and also extends radially inwardly towards said cooling plate;

f) forming a protuberance in an edge region of said cooling plate, said protuberance extending circumferentially around said cooling plate, and extending radially outwardly from said cooling plate towards said inner surface; and

g) positioning said protuberance in said first groove;

wherein said first surface of said heat sink is at an angle (β

) of less than about 90°

with respect to said main surface of said cooling plate.

6. The method of claim 5, wherein said step d) includes cutting a circumferentially extending second groove spaced apart from said first surface of said cooling plate into said main surface of said cooling plate.

7. The method of claim 5, wherein said main surface of said cooling plate has a circumferentially extending second groove spaced apart from said lateral first surface of said cooling plate.

8. The method of claim 5

wherein that the method is carried out by means of a tool having a press-fitting stamp and a deforming stamp;

wherein said step d) is carried out by means of said press-fitting stamp and

wherein said step f) is carried out by means of said deforming stamp; and

wherein said deforming stamp is arranged so as to be movable relative to said press-fitting stamp and laterally around said press-fitting stamp.

9. The method of claim 6

wherein that the method is carried out by means of a tool having a press-fitting stamp and a deforming stamp;

wherein said step d) is carried out by means of said press-fitting stamp and

wherein said step f) is carried out by means of said deforming stamp; and

wherein said deforming stamp is arranged so as to be movable relative to said press-fitting stamp and laterally around said press-fitting stamp.

10. The method of claim 7

wherein that the method is carried out by means of a tool having a press-fitting stamp and a deforming stamp;

wherein said step d) is carried out by means of said press-fitting stamp and

wherein said step f) is carried out by means of said deforming stamp; and

wherein said deforming stamp is arranged so as to be movable relative to said press-fitting stamp and laterally around said press-fitting stamp.