Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
First Claim
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1. A semiconductor device comprising:
- a (001) crystalline semiconductor substrate comprising a groove exposing (111) faces of crystalline semiconductor;
a buffer layer formed on a surface of the groove, the buffer layer comprising at least one material chosen from AlN, GaN or AlxGa1-xN, where x is between zero and one; and
an epitaxially grown semiconductor material disposed over the buffer layer, the epitaxially grown semiconductor material having a cubic crystalline phase structure and a hexagonal phase structure, wherein the epitaxially grown semiconductor layer includes at least one quantum well spanning and disposed in both the cubic crystalline phase structure and the hexagonal phase structure.
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.
17 Citations
20 Claims
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1. A semiconductor device comprising:
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a (001) crystalline semiconductor substrate comprising a groove exposing (111) faces of crystalline semiconductor; a buffer layer formed on a surface of the groove, the buffer layer comprising at least one material chosen from AlN, GaN or AlxGa1-xN, where x is between zero and one; and an epitaxially grown semiconductor material disposed over the buffer layer, the epitaxially grown semiconductor material having a cubic crystalline phase structure and a hexagonal phase structure, wherein the epitaxially grown semiconductor layer includes at least one quantum well spanning and disposed in both the cubic crystalline phase structure and the hexagonal phase structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a semiconductor device, the method comprising:
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providing a planar crystalline substrate comprising a groove exposing different crystal faces than the planar surface; depositing a buffer layer over the substrate, the buffer layer comprising at least one material chosen from AlN, GaN or AlxGa1-xN, where x is between zero and one; epitaxially growing a semiconductor layer over the buffer layer, the epitaxially grown semiconductor layer having a cubic crystalline phase structure and a hexagonal phase structure, wherein the epitaxially grown semiconductor layer includes at least one quantum well spanning and disposed in both the cubic crystalline phase structure and the hexagonal phase structure. - View Dependent Claims (17, 18, 19)
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20. A method of forming a semiconductor device, the method comprising:
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providing a planar crystalline substrate comprising a groove exposing different crystal faces than the planar surface; depositing a buffer layer over the substrate, the buffer layer comprising at least one material chosen from MN, GaN or AlxGa1-xN, where x is between zero and one; epitaxially growing a semiconductor layer over the buffer layer, the epitaxially grown semiconductor layer having a cubic crystalline phase structure and a hexagonal phase structure, wherein the epitaxially grown semiconductor layer includes at least one quantum well spanning both the cubic crystalline phase structure and the hexagonal phase structure; providing a handle wafer; bonding the epitaxially grown semiconductor layer to the handle wafer; removing the substrate; and removing the hexagonal phase structure from the cubic crystalline phase structure.
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Specification