Semiconductor device and method for producing same
First Claim
1. A semiconductor device comprising:
- a substrate;
a gate electrode on the substrate;
a gate insulating layer located over the gate electrode;
an oxide semiconductor layer on the gate insulating layer;
source and drain electrodes electrically connected to the oxide semiconductor layer;
a first transparent electrode electrically connected to the drain electrode, the first transparent electrode being a pixel electrode;
a dielectric layer located over the source and drain electrodes; and
a second transparent electrode on the dielectric layer, whereinat least a portion of the second transparent electrode overlaps with the first transparent electrode with the dielectric layer interposed between them,a lower surface of the first transparent electrode contacts with a reducing insulating layer which has a property of reducing an oxide semiconductor included in the oxide semiconductor layer,the reducing insulating layer does not contact with a channel region of the oxide semiconductor layer, andthe oxide semiconductor layer and the first transparent electrode are made of the same oxide film.
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Accused Products
Abstract
A semiconductor device (100A) includes a substrate (2), an oxide semiconductor layer (5) formed on the substrate (2), source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5), a first transparent electrode (7) electrically connected to the drain electrode (6d), a dielectric layer (8) formed on the source and drain electrodes (6s, 6d), and a second transparent electrode (9) formed on the dielectric layer (8). The upper and/or lower surface(s) of the first transparent electrode (7) contacts with a reducing insulating layer (8a) with the property of reducing an oxide semiconductor included in the oxide semiconductor layer (5). The second transparent electrode (9) overlaps at least partially with the first transparent electrode (7) via the dielectric layer (8). The oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of the same oxide film.
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Citations
14 Claims
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1. A semiconductor device comprising:
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a substrate; a gate electrode on the substrate; a gate insulating layer located over the gate electrode; an oxide semiconductor layer on the gate insulating layer; source and drain electrodes electrically connected to the oxide semiconductor layer; a first transparent electrode electrically connected to the drain electrode, the first transparent electrode being a pixel electrode; a dielectric layer located over the source and drain electrodes; and a second transparent electrode on the dielectric layer, wherein at least a portion of the second transparent electrode overlaps with the first transparent electrode with the dielectric layer interposed between them, a lower surface of the first transparent electrode contacts with a reducing insulating layer which has a property of reducing an oxide semiconductor included in the oxide semiconductor layer, the reducing insulating layer does not contact with a channel region of the oxide semiconductor layer, and the oxide semiconductor layer and the first transparent electrode are made of the same oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification