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Semiconductor device and method for manufacturing the same

  • US 9,520,503 B2
  • Filed: 02/22/2016
  • Issued: 12/13/2016
  • Est. Priority Date: 12/28/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film over the gate electrode;

    an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising;

    a first region;

    a pair of second regions, the first region located between the pair of second regions; and

    a pair of third regions, the first region and the pair of second regions located between the pair of third regions; and

    an insulating film overlapped with the first region,wherein the pair of second regions is overlapped with the gate electrode,wherein a crystallinity of the first region and a crystallinity of the pair of third regions are higher than a crystallinity of the pair of second regions.

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