Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising;
a first region;
a pair of second regions, the first region located between the pair of second regions; and
a pair of third regions, the first region and the pair of second regions located between the pair of third regions; and
an insulating film overlapped with the first region,wherein the pair of second regions is overlapped with the gate electrode,wherein a crystallinity of the first region and a crystallinity of the pair of third regions are higher than a crystallinity of the pair of second regions.
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Abstract
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising; a first region; a pair of second regions, the first region located between the pair of second regions; and a pair of third regions, the first region and the pair of second regions located between the pair of third regions; and an insulating film overlapped with the first region, wherein the pair of second regions is overlapped with the gate electrode, wherein a crystallinity of the first region and a crystallinity of the pair of third regions are higher than a crystallinity of the pair of second regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising; a first region; a pair of second regions, the first region located between the pair of second regions; a pair of third regions, the first region and the pair of second regions located between the pair of third regions; and a pair of fourth regions, the first region, the pair of second regions and the pair of third regions located between the pair of fourth regions a source electrode electrically connected to one of the pair of fourth regions; a drain electrode electrically connected to the other of the pair of fourth regions; and
,an insulating film overlapped with the first region, wherein the pair of second regions is overlapped with the gate electrode, wherein an end portion of the source electrode and an end portion of the drain electrode are tapered-shapes, wherein the end portion of the source electrode is overlapped with one of the pair of third regions, wherein the end portion of the drain electrode is overlapped with the other of the pair of third regions, wherein each of a crystallinity of the pair of second regions and a crystallinity of the pair of third regions is lower than a crystallinity of the first region, and wherein a dopant concentration of the pair of second regions is different from a dopant concentration of the pair of third regions. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification