Photovoltaic devices including heterojunctions
First Claim
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1. A photovoltaic device comprising:
- a transparent conductive layer on a substrate;
a first semiconductor layer including an n-type III-V compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer;
a second semiconductor layer including a p-type II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact, wherein a rectifying heterojunction is formed between the III-V and II-VI compound semiconductors; and
an interfacial layer between the first semiconductor layer and the second semiconductor layer that enhances the rectifying heterojunction between the III-V and II-VI compound semiconductors,wherein the interfacial layer comprises an oxide or doped composition thereof, wherein the oxide or doped composition thereof is selected from the group consisting of mercury oxide, nickel oxide, palladium oxide, silver oxide, strontium oxide, titanium oxide, and vanadium oxide.
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Abstract
A photovoltaic cell including a first semiconductor layer that includes a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer, and a second semiconductor layer that includes a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact. The photovoltaic cell further includes an interfacial layer between the first and second semiconductor layers that enhances a rectifying junction formed between the III-V and II-VI compound semiconductor materials.
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Citations
15 Claims
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1. A photovoltaic device comprising:
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a transparent conductive layer on a substrate; a first semiconductor layer including an n-type III-V compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer; a second semiconductor layer including a p-type II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact, wherein a rectifying heterojunction is formed between the III-V and II-VI compound semiconductors; and an interfacial layer between the first semiconductor layer and the second semiconductor layer that enhances the rectifying heterojunction between the III-V and II-VI compound semiconductors, wherein the interfacial layer comprises an oxide or doped composition thereof, wherein the oxide or doped composition thereof is selected from the group consisting of mercury oxide, nickel oxide, palladium oxide, silver oxide, strontium oxide, titanium oxide, and vanadium oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A system for generating electrical energy comprising:
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a multilayered photovoltaic cell including a transparent conductive layer on a substrate, a first semiconductor layer including an n-type III-V compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer, a second semiconductor layer including a p-type II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal electrode, wherein a rectifying heterojunction is formed between the III-V and II-VI compound semiconductors, and an interfacial layer that enhances the rectifying heterojunction between the III-V and II-VI compound semiconductors; a first electrical connection connected to the transparent conductive layer; and a second electrical connection connected to the back metal electrode, the back metal electrode being adjacent to the second semiconductor layer, wherein the interfacial layer comprises an oxide or doped composition thereof, wherein the oxide or doped composition thereof is selected from the group consisting of mercury oxide, copper oxide, iron oxide, nickel oxide, palladium oxide, silver oxide, strontium oxide, titanium oxide, and vanadium oxide. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification