Light emitting diode chip having electrode pad
First Claim
1. A light emitting diode device comprising:
- a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer located over the first conductive-type semiconductor layer, and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer;
a transparent conductive layer formed over the second conductive-type semiconductor layer;
a second electrode pad formed over the transparent conductive layer;
a second electrode extension extending from the second electrode pad; and
a current blocking layer interposed between the transparent conductive layer and the second conductive-type semiconductor layer,wherein the transparent conductive layer has an opening exposing at least a portion of the current blocking layer, and the second electrode extension includes a first portion electrically connected to the transparent conductive layer and a second portion electrically insulated from the transparent conductive layer.
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Accused Products
Abstract
Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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Citations
20 Claims
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1. A light emitting diode device comprising:
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a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer located over the first conductive-type semiconductor layer, and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a transparent conductive layer formed over the second conductive-type semiconductor layer; a second electrode pad formed over the transparent conductive layer; a second electrode extension extending from the second electrode pad; and a current blocking layer interposed between the transparent conductive layer and the second conductive-type semiconductor layer, wherein the transparent conductive layer has an opening exposing at least a portion of the current blocking layer, and the second electrode extension includes a first portion electrically connected to the transparent conductive layer and a second portion electrically insulated from the transparent conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A light emitting diode device comprising:
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is a substrate having first and second edge that oppose to each other; a light emitting structure including a first conductive-type semiconductor layer formed over the substrate, a second conductive-type semiconductor layer formed over the first conductive-type semiconductor layer; and
an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer;a first electrode pad formed over the light emitting structure around the first edge of the substrate; a first electrode extension extending from the first electrode pad; a second electrode pad formed over the light emitting structure around the second edge of the substrate; and a second electrode extension extending from the second electrode pad, wherein along the first electrode extension, first openings are located spaced apart from one another to connect the first electrode extension to the first conductive-type semiconductor layer, and along the second electrode extension, second openings are located spaced apart from one another to cause a current block in the openings and a current crowd between the openings. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification