Light-emitting device

• US 9,520,545 B2
• Filed: 03/03/2016
• Issued: 12/13/2016
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Hsu, Chia-Liang
• Primary Examiner(s): MOORE, WHITNEY
• Application Number:
  US15/059,987
• Publication Number:
  US 20160190416A1
• Time in Patent Office: 285 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device is provided. The light-emitting device comprises: a supporting member having a top surface; a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member; and a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via; and a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers.

Claims

1. A light-emitting device, comprising:

a supporting member having a top surface;

a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member;

a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via;

a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers; and

a conductive adhesive layer between the semiconductor structure and the second conductive via,

wherein the conductive adhesive layer directly contacts the second conductive via and covers a top surface of the second conductive via.

2. The light-emitting device according to claim 1, further comprising an electrode and an insulation structure, wherein the electrode is on the semiconductor structure, and the insulation structure is between the electrode and the supporting member.

3. The light-emitting device according to claim 2, wherein the insulation structure is on the sidewall of the semiconductor structure and on a part of the supporting member that is between the first conductive via and the second conductive via.

4. The light-emitting device according to claim 2, wherein the insulation structure is between the semiconductor structure and the conductive layer.

5. The light-emitting device according to claim 2, further comprising a protecting layer overlaps the insulation structure.

6. The light-emitting device according to claim 1, further comprising an insulation structure between the semiconductor structure and the conductive layer.

7. The light-emitting device according to claim 1, wherein the supporting member comprises non-conductive material.

8. The light-emitting device according to claim 1, wherein the conductive layer covers a top surface of the first conductive via.

9. The light-emitting device according to claim 1, wherein a surface of the conductive layer is coplanar with a surface of the conductive adhesive layer.

10. The light-emitting device according to claim 1, wherein a transverse width of the conductive adhesive layer is the same as a transverse width of the semiconductor structure.

11. The light-emitting device according to claim 1, further comprising an electrode between the semiconductor structure and the conductive layer.

12. The light-emitting device according to claim 1, wherein the supporting member comprises flexible material.

13. The light-emitting device according to claim 1, wherein the supporting member has a thickness smaller than 200 μ

m.

14. A light-emitting device, comprising:

a supporting member having a top surface;

a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member;

a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via; and

a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers,

wherein the conductive layer extends on the semiconductor structure opposite to the second conductive via.

15. The light-emitting device according to claim 14, further comprising an insulation structure between the semiconductor structure and the conductive layer.

16. A light-emitting device, comprising:

a supporting member having a top surface;

a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member;

a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via; and

a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers,

wherein the top surface is with a first surface area, the first conductive via has a top surface with a second surface area, the second conductive via has a top surface with a third surface area, and the sum of the second surface area and the third surface area is greater than 40% of the first surface area and smaller than the first surface area.

17. The light-emitting device according to claim 16, further comprising an insulation structure between the semiconductor structure and the conductive layer.

18. A light-emitting device, comprising:

a supporting member having a top surface;

a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member;

a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via; and

a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers,

wherein the top surface is with a first surface area, and the active layer has a fourth surface area greater than 30% of the first surface area and smaller than the first surface area.

19. The light-emitting device according to claim 18, further comprising an insulation structure between the semiconductor structure and the conductive layer.

20. A light-emitting device, comprising:

a supporting member having a top surface;

a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member;

a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via;

a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers; and

a protection layer directly contacts the supporting member and the conductive layer.